Analysis of the interface trap density in SOI FinFETs with different TiN gate electrode thickness through charge pumping technique

ECS Transactions

Volumn 23, Issue 1, 2009, Pages 559-565

  Rodrigues, M ^a,b   Cho, M ^b   Martino, J A ^a   Collaert, N ^b   Mercha, A ^b   Simoen, E ^b   Claeys, C ^b,c  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; FINS (HEAT EXCHANGE); MICROELECTRONICS; REFRACTORY METAL COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; TITANIUM NITRIDE;

CHARGE PUMPING TECHNIQUE; FIN WIDTHS; GATED DIODES; INTERFACE TRAP DENSITY; METAL GATE; SOI FINFETS; TIN GATES; TRIPLE-GATE;

FINFET;

EID: 74549185794     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3183764     Document Type: Conference Paper

References (19)

1. J. P. Colinge, Solid State Eletronics, vol. 48, 897 (2004).
2. S.-H. Lo, IEEE Trans. Electron Dev., vol. 18, 209 (1997).
3. G. Vellianitis et al., IEDM Tech. Dig., 684 (2007).
4. M. Yang, E.P. Gusev, M. Ieong, O. Gluschenkiv et al., IEEE Electron Device Letters, vol. 24, 339 (2003).
5. Y.-C. Yeo, T.-J. King and C. Hu, J. Appl. Phys., vol. 92, 7266 (2002).
6. C. Choi, P. R. Chidambaram, R. Khamankar, C. F. Machala, Z. Yu and R. W. Dutton, IEEE Electron Dev. Lett., vol. 23, 224 (2002).
7. L. Chang, M. Leong and M. Yang, IEEE Trans. Electron Dev., vol. 51, 1621 (2004).
8. Y. Liu et al., IEEE Transactions on Nanotechnology, vol. 5, 723 (2006).
9. R. Singanamalla et al., IEEE Electron Dev. Lett., vol. 27, 332 (2006).
10. K. Choi et al., ESSDERC 2005, pp. 101-104 (2005).
11. I. Ferain et al., ESSDERC 2008, pp. 202-205 (2008).
12. B. S. Doyle, S. Datta, M. Doczy, S. Hareland, B. Jin, J. Kavalieros, T. Linton, A. Murthy, R. Rios and R. Chau, IEEE Electron Dev. Lett., vol. 24, 263 (2003).
13. Y.-K. Choi, L. Chang, R. Ranade, J.-S. Lee, D. Ha, S. Balasubramanian, A. Agarwak, M. Ameen, T.-J. King and J. Bokor, in IEDM Tech. Dig., pp. 259-262, (2002).
14. G. Groeseneken, H. E. Maes, N. Beltran, and R. F. de Keersmaecker, IEEE Trans. Electron Dev., vol. ED-31, 42 (1984).
15. T. Ouisse, S. Cristoloveanu, T. Elewa, H. Haddara, G. Borel and D. E. Ioannou, IEEE Trans. Electron Dev., vol. 38, 1432 (1991).
16. G. Kapila, B. Kaczer, A. Nackaerts, N. Collaert and G.V. Groeseneken, IEEE Electron Device Lett., vol. 28, 232 (2007).
17. M. Cho, R. Degraeve, G. Pourtois, A. Delabie, L-A Ragnarsson, T. Kauerauf, G. Groeseneken, S. De Gendt, M. Heyns, and C. S. Hwang, IEEE Trans. Electron Dev., vol. 54, 752 (2007).
18. M. Rodrigues, A. Mercha, N. Collaert, E. Simoen, C. Claeys and J. A. Martino, to be published in the Proc. of the 20th International Conference on Noise and Fluctuations (2009).
19. M. S. Rahman et al., J. Appl. Phys., vol. 103, 033706 (2008).