Electrical characteristics of thermal-SiON-gated Ge p-MOSFET formed on Si substrate

IEEE Electron Device Letters

Volumn 30, Issue 1, 2009, Pages 72-74

  Wu, Yung Hsien ^a   Wu, Min Lin ^a   Lin, Yuan Sheng ^a   Wu, Jia Rong ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Gate dielectric; Ge MOSFET; Hole mobility; Junction leakage; Thermal SiON

Indexed keywords

GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HOLE MOBILITY; MOSFET DEVICES; PASSIVATION; SILICON; SUBSTRATES;

CRYSTALLINITY; DEVICE STRUCTURES; ELECTRICAL CHARACTERISTICS; GE MOSFET; INTERFACE TRAP DENSITIES; JUNCTION LEAKAGE; SI SUBSTRATES; SOURCE/DRAIN REGIONS; THERMAL SION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 58149496079     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2008317     Document Type: Article

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