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Applied Physics Letters

Volumn 97, Issue 4, 2010, Pages

Ge-stabilized tetragonal ZrO2 as gate dielectric for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate

(4) Wu, Yung Hsien a Wu, Min Lin a Wu, Jia Rong a Chen, Lun Lun a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE OXIDE THICKNESS; GE ATOM; INTERFACE CHARACTERISTIC; INTERFACE QUALITY; INTERFACIAL LAYER; METAL-OXIDE- SEMICONDUCTORCAPACITORS; SI SUBSTRATES; THERMALLY DRIVEN; ULTRA-THIN;

CAPACITORS; CRYSTALLINE MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; LEAKAGE (FLUID); LEAKAGE CURRENTS; MOS CAPACITORS; SEMICONDUCTING SILICON COMPOUNDS; ZIRCONIUM ALLOYS;

SEMICONDUCTING SILICON;

EID: 77955740852 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3455904 Document Type: Article

Times cited : (26)

References (22)

1
- 58149242281
- JAPIAU 0021-8979,. 10.1063/1.3041628
- J. Robertson, J. Appl. Phys. JAPIAU 0021-8979 104, 124111 (2008). 10.1063/1.3041628
- (2008) J. Appl. Phys. , vol.104 , pp. 124111
- Robertson, J.¹

2
- 77955719999
- DTPTEW 0743-1562.
- S. Migita, Y. Watanabe, H. Ota, H. Ito, Y. Kamimuta, T. Nabatame, and A. Toriumi, Dig. Tech. Pap.-Symp. VLSI Technol. DTPTEW 0743-1562 2008, 512.
- Dig. Tech. Pap. - Symp. VLSI Technol. , vol.2008 , pp. 512
- Migita, S.¹ Watanabe, Y.² Ota, H.³ Ito, H.⁴ Kamimuta, Y.⁵ Nabatame, T.⁶ Toriumi, A.⁷

3
- 33749476389
- 2
- DOI 10.1063/1.2355471
- K. Tomida, K. Kita, and A. Toriumi, Appl. Phys. Lett. APPLAB 0003-6951 89, 142902 (2006). 10.1063/1.2355471 (Pubitemid 44522240)
- (2006) Applied Physics Letters , vol.89 , Issue.14 , pp. 142902
- Tomida, K.¹ Kita, K.² Toriumi, A.³

4
- 76549125666
- ECSTF8 1938-5862 (),. 10.1149/1.3122120
- L. Zhang, W. He, D. S. H. Chan, and B. J. Cho, ECS Trans. ECSTF8 1938-5862 19 (2), 615 (2009). 10.1149/1.3122120
- (2009) ECS Trans. , vol.19 , Issue.2 , pp. 615
- Zhang, L.¹ He, W.² Chan, D.S.H.³ Cho, B.J.⁴

5
- 35549001468
- Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films
- DOI 10.1063/1.2798498
- C. Adelmann, V. Sriramkumar, S. V. Elshocht, P. Lehnen, T. Conard, and S. D. Gendt, Appl. Phys. Lett. APPLAB 0003-6951 91, 162902 (2007). 10.1063/1.2798498 (Pubitemid 350010700)
- (2007) Applied Physics Letters , vol.91 , Issue.16 , pp. 162902
- Adelmann, C.¹ Sriramkumar, V.² Van Elshocht, S.³ Lehnen, P.⁴ Conard, T.⁵ De Gendt, S.⁶

6
- 37249061772
- High-k/Ge MOSFETs for future nanoelectronics
- DOI 10.1016/S1369-7021(07)70350-4, PII S1369702107703504
- Y. Kamata, Mater. Today MTOUAN 1369-7021 11, 30 (2008). 10.1016/S1369-7021(07)70350-4 (Pubitemid 350266412)
- (2008) Materials Today , vol.11 , Issue.1-2 , pp. 30-38
- Kamata, Y.¹

7
- 67349123424
- MIENEF 0167-9317,. 10.1016/j.mee.2009.03.076
- J. Müller T. S. Böscke, U. Schröder, M. Reinicke, L. Oberbeck, D. Zhou, W. Weinreich, P. Kücher, M. Lemberger, and L. Frey, Microelectron. Eng. MIENEF 0167-9317 86, 1818 (2009). 10.1016/j.mee.2009.03.076
- (2009) Microelectron. Eng. , vol.86 , pp. 1818
- Müller, J.¹ Böscke, T.S.² Schröder, U.³ Reinicke, M.⁴ Oberbeck, L.⁵ Zhou, D.⁶ Weinreich, W.⁷ Kücher, P.⁸ Lemberger, M.⁹ Frey, L.¹⁰

8
- 14544268556
- Dielectric properties of crystalline and amorphous transition metal oxides and silicates as potential high-κ candidates: The contribution of density-functional theory
- DOI 10.1088/0953-8984/17/7/R03
- G. M. Rignanese, J. Phys.: Condens. Matter JCOMEL 0953-8984 17, R357 (2005). 10.1088/0953-8984/17/7/R03 (Pubitemid 40305202)
- (2005) Journal of Physics Condensed Matter , vol.17 , Issue.7
- Rignanese, G.-M.¹

9
- 0037084710
- PRBMDO 0163-1829,. 10.1103/PhysRevB.65.075105
- X. Zhao and D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 65, 075105 (2002). 10.1103/PhysRevB.65.075105
- (2002) Phys. Rev. B , vol.65 , pp. 075105
- Zhao, X.¹ Vanderbilt, D.²

10
- 48249125066
- APPLAB 0003-6951,. 10.1063/1.2958238
- Y. H. Wu, C. K. Kao, B. Y. Chen, Y. S. Lin, M. Y. Li, and H. C. Wu, Appl. Phys. Lett. APPLAB 0003-6951 93, 033511 (2008). 10.1063/1.2958238
- (2008) Appl. Phys. Lett. , vol.93 , pp. 033511
- Wu, Y.H.¹ Kao, C.K.² Chen, B.Y.³ Lin, Y.S.⁴ Li, M.Y.⁵ Wu, H.C.⁶

11
- 70549109097
- EDLEDZ 0741-3106,. 10.1109/LED.2009.2034115
- Y. H. Wu, L. L. Chen, Y. S. Lin, M. Y. Li, and H. C. Wu, IEEE Electron Device Lett. EDLEDZ 0741-3106 30, 1290 (2009). 10.1109/LED.2009.2034115
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 1290
- Wu, Y.H.¹ Chen, L.L.² Lin, Y.S.³ Li, M.Y.⁴ Wu, H.C.⁵

12
- 38049010868
- APPLAB 0003-6951,. 10.1063/1.2828696
- D. Fischer and A. Kersch, Appl. Phys. Lett. APPLAB 0003-6951 92, 012908 (2008). 10.1063/1.2828696
- (2008) Appl. Phys. Lett. , vol.92 , pp. 012908
- Fischer, D.¹ Kersch, A.²

13
- 51349107303
- APPLAB 0003-6951,. 10.1063/1.2977555
- P. Tsipas, S. N. Volkos, A. Sotiropoulos, S. F. Galata, G. Mavrou, D. Tsoutsou, Y. Panayiotatos, A. Dimoulas, C. Marchiori, and J. Fompeyrine, Appl. Phys. Lett. APPLAB 0003-6951 93, 082904 (2008). 10.1063/1.2977555
- (2008) Appl. Phys. Lett. , vol.93 , pp. 082904
- Tsipas, P.¹ Volkos, S.N.² Sotiropoulos, A.³ Galata, S.F.⁴ Mavrou, G.⁵ Tsoutsou, D.⁶ Panayiotatos, Y.⁷ Dimoulas, A.⁸ Marchiori, C.⁹ Fompeyrine, J.¹⁰

14
- 0001720302
- APPLAB 0003-6951,. 10.1063/1.123176
- Y. H. Wu, W. J. Chen, A. Chin, and C. Tsai, Appl. Phys. Lett. APPLAB 0003-6951 74, 528 (1999). 10.1063/1.123176
- (1999) Appl. Phys. Lett. , vol.74 , pp. 528
- Wu, Y.H.¹ Chen, W.J.² Chin, A.³ Tsai, C.⁴

15
- 34548417580
- Thermal gate Si O2 for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate
- DOI 10.1063/1.2776352
- Y. H. Wu, J. R. Wu, and M. L. Wu, Appl. Phys. Lett. APPLAB 0003-6951 91, 093503 (2007). 10.1063/1.2776352 (Pubitemid 47352366)
- (2007) Applied Physics Letters , vol.91 , Issue.9 , pp. 093503
- Wu, Y.-H.¹ Wu, J.-R.² Wu, M.-L.³

16
- 71549167991
- APPLAB 0003-6951,. 10.1063/1.3265947
- W. B. Chen and A. Chin, Appl. Phys. Lett. APPLAB 0003-6951 95, 212105 (2009). 10.1063/1.3265947
- (2009) Appl. Phys. Lett. , vol.95 , pp. 212105
- Chen, W.B.¹ Chin, A.²

17
- 41749107944
- Ge-interface engineering with ozone oxidation for low interface-state density
- DOI 10.1109/LED.2008.918272
- D. Kuzum, T. Krishnamohan, A. J. Pethe, A. K. Okyay, Y. Oshima, Y. Sun, J. P. McVittie, P. A. Pianetta, P. C. McIntyre, and K. C. Saraswat, IEEE Electron Device Lett. EDLEDZ 0741-3106 29, 328 (2008). 10.1109/LED.2008.918272 (Pubitemid 351486773)
- (2008) IEEE Electron Device Letters , vol.29 , Issue.4 , pp. 328-330
- Kuzum, D.¹ Krishnamohan, T.² Pethe, A.J.³ Okyay, A.K.⁴ Oshima, Y.⁵ Sun, Y.⁶ McVittie, J.P.⁷ Pianetta, P.A.⁸ McIntyre, P.C.⁹ Saraswat, K.C.¹⁰

18
- 10044277098
- APPLAB 0003-6951,. 10.1063/1.1812835
- N. Wu, Q. Zhang, C. Zhu, D. S. H. Chan, M. F. Li, N. Balasubramanian, A. Chin, and D. L. Kwong, Appl. Phys. Lett. APPLAB 0003-6951 85, 4127 (2004). 10.1063/1.1812835
- (2004) Appl. Phys. Lett. , vol.85 , pp. 4127
- Wu, N.¹ Zhang, Q.² Zhu, C.³ Chan, D.S.H.⁴ Li, M.F.⁵ Balasubramanian, N.⁶ Chin, A.⁷ Kwong, D.L.⁸

19
- 0141538316
- DTPTEW 0743-1562.
- W. P. Bai, N. Lu, J. Liu, A. Rarmrez, D. L. Kwong, D. Wristers, A. Ritenour, L. Lee, and D. Antoniadis, Dig. Tech. Pap.-Symp. VLSI Technol. DTPTEW 0743-1562 2003, 121.
- Dig. Tech. Pap. - Symp. VLSI Technol. , vol.2003 , pp. 121
- Bai, W.P.¹ Lu, N.² Liu, J.³ Rarmrez, A.⁴ Kwong, D.L.⁵ Wristers, D.⁶ Ritenour, A.⁷ Lee, L.⁸ Antoniadis, D.⁹

20
- 2442501598
- EDLEDZ 0741-3106,. 10.1109/LED.2004.827285
- C. O. Chui, H. Kim, P. C. McIntyre, and K. C. Saraswat, IEEE Electron Device Lett. EDLEDZ 0741-3106 25, 274 (2004). 10.1109/LED.2004.827285
- (2004) IEEE Electron Device Lett. , vol.25 , pp. 274
- Chui, C.O.¹ Kim, H.² Mcintyre, P.C.³ Saraswat, K.C.⁴

21
- 0036687234
- Germanium MOS capacitors incorporating ultrathin high-κ gate dielectric
- DOI 10.1109/LED.2002.801319, PII 1011092002801319
- C. O. Chui, S. Ramanathan, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, IEEE Electron Device Lett. EDLEDZ 0741-3106 23, 473 (2002). 10.1109/LED.2002.801319 (Pubitemid 34950025)
- (2002) IEEE Electron Device Letters , vol.23 , Issue.8 , pp. 473-475
- Chui, C.O.¹ Ramanathan, S.² Triplett, B.B.³ McIntyre, P.C.⁴ Saraswat, K.C.⁵

22
- 0141426803
- DTPTEW 0743-1562.
- C. H. Huang, M. Y. Yang, A. Chin, W. J. Chen, C. X. Zhu, B. J. Cho, M. F. Li, and D. L. Kwong, Dig. Tech. Pap.-Symp. VLSI Technol. DTPTEW 0743-1562 2003, 119.
- Dig. Tech. Pap. - Symp. VLSI Technol. , vol.2003 , pp. 119
- Huang, C.H.¹ Yang, M.Y.² Chin, A.³ Chen, W.J.⁴ Zhu, C.X.⁵ Cho, B.J.⁶ Li, M.F.⁷ Kwong, D.L.⁸

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