Tetragonal ZrO2/Al2O3 Stack as High-κ gate dielectric for Si-Based MOS devices

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 1014-1016

  Wu, Yung Hsien ^a   Chen, Lun Lun ^a   Lyu, Rong Jhe ^a   Li, Ming Yen ^b   Wu, Hsiao Che ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b ProMOS Technologies Inc   (Taiwan)

Author keywords

Al2O3; gate dielectric; grain boundaries; high ; nitridation; passivation; tetragonal ZrO2

Indexed keywords

AL2O3; EFFECTIVE OXIDE THICKNESS; FLAT-BAND VOLTAGE; FREQUENCY DISPERSION; GATE BIAS; INTERFACIAL LAYER; PLASMA NITRIDATION; ROBUST RELIABILITY; SI-BASED; TETRAGONAL ZRO2; THERMALLY STABLE;

ALUMINUM; GATE DIELECTRICS; GATES (TRANSISTOR); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MOLECULAR BEAM EPITAXY; MOS DEVICES; NITRIDATION; PASSIVATION; SEMICONDUCTING SILICON;

ZIRCONIUM ALLOYS;

EID: 77956171201     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2053191     Document Type: Article

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