Contactless electroreflectance of ZnO layers grown by atomic layer deposition at low temperature

Semiconductor Science and Technology

Volumn 26, Issue 7, 2011, Pages

  Kudrawiec, R ^a   Misiewicz, J ^a   Wachnicki, L ^b   Guziewicz, E ^b   Godlewski, M ^b,c  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

^c CARDINAL STEFAN WYSZY SKI UNIVERSITY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACTLESS ELECTROREFLECTANCE; EXCITONIC RESONANCE; GAN SUBSTRATE; GAN TEMPLATE; HIGHER TEMPERATURES; LOW TEMPERATURES; MONOCRYSTALLINE; POLYCRYSTALLINE; POLYCRYSTALLINE ZNO; ROOM TEMPERATURE; SURFACE ORIENTATION; ZNO LAYERS;

ATOMIC LAYER DEPOSITION; GALLIUM NITRIDE; GLASS; RESONANCE; ZINC OXIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79956206002     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/7/075012     Document Type: Article

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