Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures

Microelectronics Journal

Volumn 40, Issue 2, 2009, Pages 370-372

  Kudrawiec, R ^a   Motyka, M ^a   Misiewicz, J ^a   Paszkiewicz, B ^a   Paszkiewicz, R ^a   Tlaczala M ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Band bending; Contactless electroreflectance; Fermi level; GaN

Indexed keywords

CRYSTALS; ELECTRIC FIELDS; FERMI LEVEL; FERMIONS; GALLIUM ALLOYS; RESONANCE; SECONDARY BATTERIES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SILICON; TRANSISTORS;

ALGAN GAN; ALGAN/GAN HETEROSTRUCTURES; BAND BENDING; CER RESONANCE; CONTACTLESS ELECTROREFLECTANCE; FERMI LEVEL PINNING; FRANZ-KELDYSH OSCILLATIONS; GAN; GAN LAYERS; HETEROSTRUCTURES; MG-DOPED; ROOM-TEMPERATURE (RT); SURFACE BAND BENDING; TRANSISTOR STRUCTURES;

GALLIUM NITRIDE;

EID: 58749093587     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.07.028     Document Type: Article

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