Contactless electroreflectance of CdSe/ZnSe quantum dots grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 83, Issue 21, 2003, Pages 4399-4401

  Muñoz, Martin ^a   Guo, Shiping ^a   Zhou, Xuecong ^a   Tamargo, Maria C ^a   Huang, Y S ^b   Trallero Giner, C ^c   Rodriguez A H ^c  

^a CITY COLLEGE OF NEW YORK   (United States)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c UNIVERSITY OF HAVANA   (Cuba)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; COMPUTER SIMULATION; ELECTRON TRANSITIONS; ENERGY GAP; HAMILTONIANS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; WETTING;

BAND GAPS; BIAXIAL STRAIN; CADMIUM SELENIDE; CONTACTLESS ELECTROREFLECTANCE; ELECTROREFLECTANCE TRANSITIONS; INTERBAND TRANSITIONS; ZINC SELENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0348107227     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1628393     Document Type: Article

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