Contactless electroreflectance investigation of energy levels in a 1.3 μm emitting laser structure with the gain medium composed of InAsN quantum dots embedded in GaInNAsGaAs quantum wells

Applied Physics Letters

Volumn 90, Issue 22, 2007, Pages

  Motyka, M ^a   Kudrawiec, R ^a   Sek G ^a   Misiewicz, J ^a   Bisping, D ^b   Marquardt, B ^b   Forchel, A ^b   Fischer, M ^c  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF WÜRZBURG   (Germany)

^c NANOPLUS NANOSYSTEMS AND TECHNOLOGIES GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM COMPOUNDS; LASER APPLICATIONS; OPTICAL TRANSITIONS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; THERMAL ENERGY;

ELECTROREFLECTANCE; ENERGY SEPARATION; LASER STRUCTURES;

GROUND STATE;

EID: 34249876312     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2743382     Document Type: Article

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