Analysis of line-edge roughness in resist patterns and its transferability as origins of device performance degradation and variation

Journal of Photopolymer Science and Technology

Volumn 16, Issue 3, 2003, Pages 387-393

  Yamaguchi, Atsuko ^a   Fukuda, Hiroshi ^a   Kawada, Hiroki ^b   Iizumi, Takashi ^b  

^a HITACHI LTD   (Japan)

^b HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

Author keywords

CD SEM; Device Performance; Dry Etching; Line edge Roughness; Measurement Parameter

Indexed keywords

ARTICLE; CALCULATION; DEGRADATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; SIGNAL NOISE RATIO; SURFACE PROPERTY;

EID: 0037830592     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.16.387     Document Type: Article

References (7)

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4. T. Linton, et al., Technical Digest of IEDM 2002 (2002) 12.1
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6. A. Yamaguchi and O. Komuro, to be published in Jpn. J. Appl. Phys. 42 No.6B (2003)
7. H. Fukuda, to be published in Jpn. J. Appl. Phys. 42 No.6B (2003)