Effects of different processing conditions on line edge roughness for 193nm and 157nm resists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5375, Issue PART 1, 2004, Pages 266-275

  Ercken, M ^a   Leunissen, L H A ^a   Pollentier, I ^a   Patsis, G P ^b   Constantoudis, V ^b   Gogolides, E ^b  

^a IMEC   (Belgium)

^b INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

193 and 157nm lithography; Line edge roughness (LER); Metrology; Shallow trench isolation (STI)

Indexed keywords

193 AND 157NM LITHIOGRAPHY; AERIAL IMAGES; LINE EDGE ROUGHNESS (LER); SHALLOW TRENCH ISOLATION (STI); STANDARD DEVIATION;

COMPUTER SIMULATION; DIGITAL CIRCUITS; ELECTRIC CURRENTS; IMAGE PROCESSING; OPTIMIZATION; PATTERN RECOGNITION; ROUGHNESS MEASUREMENT; SCANNING ELECTRON MICROSCOPY; TRANSISTORS;

PROCESS CONTROL;

EID: 3843060605     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.537339     Document Type: Conference Paper

References (17)

1. W.G. Lawrence, "Spatial Frequency Analysis of Line Edge Roughness in Nine Chemically Related Photoresists", Proc. SPIE 5039, 713(2003)
2. S. Masuda, X. Ma, G. Noya and G. Pawlowski, "Lithography and line edge roughness of high activation energy resists", Proc. SPIE 3999, 252 (2000)
3. J. Shin, G. Han, Y. Ma, K. Moloni and F. Cerrina, "Resist line edge roughness and aerial image contrast", J. Vac. Sci. Technol. B19, 2890 (2001)
4. T. Azuma, K. Chiba, M. Imabeppu, D. Kawamura and Y. Onishi, "Line edge roughness of chemically amplified resists", Proc. SPIE 3999, 264 (2000)
5. M. Ercken, G. Storms, C. Delvaux, N. Vandenbroeck, P. Leunissen and I. Pollentier, "Line edge roughness and its increasing importance", Proceedings of Interface (2002)
6. H.P. Koh, Q.Y. Lin, X. Hu and L. Chan, "Effect of process parameters on edge roughness of chemically amplified resists", Proc. SPIE 3999, 240 (2000)
7. J. A. Croon, G. Storms, S. Winkelmeier, I. Pollentier, M. Ercken, S. Decoutere, W. Sansen and H.E. Maes, "Line Edge Roughness: Characterization, Modeling and Impact on Device Behavior," Proc. IEDM 2002, 307 (2002)
8. J.A. Croon, L.H.A. Leunissen, M. Jurczak, M. Benndorf, R. Rooyackers, K. Ronse, S. Decoutere, W. Sansen and H.E. Maes, "Experimental investigation of the impact of line-edge roughness on MOSFET performance and yield," Proc. ESSDERC, 227 (2003)
9. A. Yamaguchi, R. Tsuchiya, H. Fukuda, O. Komuro, H. Kawada and T. Iizumi, "Characterization of line-edge roughness in resist patterns and estimations of its effect on device performance", Proc. SPIE 5038, 689 (2003)
10. L.H.A. Leunissen, W.G. Lawrence and M. Ercken, "Line edge roughness: experimental results related to a two-parameter model", MNE 2003, to be published in Microelectronic Engineering
11. G.P. Patsis, V. Constantoudis, A. Tserepi and E. Gogolides, "Quantification of Line Edge Roughness of Photoresists. Part I: A comparison between off-line and on-line analysis of top-down SEM images", J. Vac. Sci. Technol. B21, 1008 (2003)
12. V. Constantoudis, G. P. Patsis, A. Tserepi and E. Gogolides, "Quantification of Line Edge Roughness of Photoresists. Part II: Scaling and Fractal Analysis and the best roughness descriptors", J. Vac. Sci. Technol. B21, 1019 (2003)
13. G. P. Patsis, V. Constantoudis, A. Tserepi, and E. Gogolides, Grozdan Grozev, and T. Hoffmann, "Roughness analysis of lithographically produced nanostructures: off-line measurement and scaling analysis", Microelectronic Engineering 67-8, 319 (2003)
14. A.-L. Barabasi and H.E. Stanley, Fractal Concepts in Surface Growth, Cambridge University Press, Cambridge, England, 1995
15. G. P. Patsis, N. Glezos, and E. Gogolides, "Monte Carlo Simulation of gel formation and surface and line-edge roughness in negative tone chemically amplified resists", J. Vac. Sci. Technol. B 21(1), 254-66 (2003)
16. K.F. Dombrowski, A. Fischer, B. Dietrich, I. De Wolf, H. Bender, S. Pochet, V. Simons, R. Rooyackers, G. Badenes, C. Stuer and J. Van Landuyt, "Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy", Proc. IEDM 1999, 257 (1999)
17. M.I. Sanchez et al., "Line Edge Roughness: Status and Prospects for Measurement Improvements", EIPBN 2003, to be published in Journal of Vacuum Science & Technology