Full spectral analysis of line width roughness

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5752, Issue I, 2005, Pages 499-509

  Leunissen, L H A ^a   Lorusso, G F ^b   Ercken, M ^a   Croon, J A ^a   Yang, H ^b   Azordegan, A ^b   DiBiase, T ^b  

^a IMEC   (Belgium)

^b KLA TENCOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FOURIER OPTICS; MEASUREMENT THEORY; PARAMETER ESTIMATION; RANDOM PROCESSES;

FOURIER ANALYSIS; LINE WIDTH ROUGHNESS (LWR); STANDARD DEVIATION;

SPECTRUM ANALYSIS;

EID: 24644479611     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.600185     Document Type: Conference Paper

References (15)

1. W.G. Lawrence, "Spatial Frequency Analysis of Line Edge Roughness in Nine Chemically Related Photoresists", Proc. SPIE 5039, 713 (2003)
2. J. Shin, G. Han, Y. Ma, K. Moloni and F. Cerrina, "Resist line edge roughness and aerial image contrast", J. Vac. Sci. Technol. B19, 2890 (2001)
3. H.P. Koh, Q.Y. Lin, X. Hu and L. Chan, "Effect of process parameters on edge roughness of chemically amplified resists", Proc. SPIE 3999, 240 (2000)
4. S. Masuda, X. Ma, G. Noya and G. Pawlowski, "Lithography and line edge roughness of high activation energy resists", Proc. SPIE 3999, 252 (2000)
5. M. Ercken, G. Storms, C. Delvaux, N. Vandenbroeck, P. Leunissen and I. Pollentier, "Line edge roughness and its increasing importance", Proceedings of Interface (2002)
6. G.P. Patsis, V. Constantoudis, A. Tserepi and E. Gogolides, "Quantification of Line Edge Roughness of Photoresists. Part I: A comparison between off-line and on-line analysis of top-down SEM images", J. Vac. Sci. Technol. 821, 1008 (2003)
7. G. P. Patsis, V. Constantoudis, A. Tserepi, and E. Gogolides, Grozdan Grozev, and T. Hoffmann, "Roughness analysis of lithographically produced nanostructures: off-line measurement and scaling analysis", Microelectronic Engineering 67-8: 319-25 (2003)
8. A.-L. Barabasi and H.E. Stanley, "Fractal Concepts in Surface Growth", Cambridge University Press, Cambridge, England, 1995
9. L.H.A. Leunissen, G. F. Lorusso, T. DiBiase, H. Yang, A. Azordegan, "On-line Spectral Analysis of Line Edge Roughness: Algorithms Qualification and Transfer to Etch", Semiconductor Fabtech (to be published)
10. J.A. Croon, L.H.A. Leunissen, M. Jurczak, M. Benndorf, R. Rooyackers, K. Ronse, S. Decoutere, W. Sansen and H.E. Maes, "Experimental investigation of the impact of line-edge roughness on MOSFET performance and yield," Proc. ESSDERC, 227 (2003)
11. V. Constantoudis, G. P. Patsis, L. H. A. Leunissen, and E. Gogolides, "Line edge roughness and critical dimension variation: Fractal characterization and comparison using model functions", J. Vac. Sci. Technol. B 22, 1974 (2004)
12. L.H.A. Leunissen, W.G. Lawrence and M. Ercken, "Line edge roughness: Experimental Results related to a two-parameter model" Microelectron. Eng. 73-74, 265 (2004).
13. V. Constantoudis, G. P. Patsis, L. H. A. Leunissen, and E. Gogolides, "Toward a complete description of line width roughness: a comparison of different methods for vertical and spatial LER and LWR analysis and CD variation", Proc. SPIE 5375, 967 (2004)
14. J.A. Croon, W. Sansen, and H.E. Maes, "Matching properties of deep sub-micron MOS transistor" Springer (to be published)
15. L.H.A. Leunissen, M. Ercken, M. Goethals, S. Locorotondo, K. Ronse, G.B. Derksen, D. Nijkerk, G.F. Lorusso, "Transfer of line edge roughness during gate patterning process" Proceedings of International Symposium on Dry Process (ISBN 4-9900915-7-4), 1 (2004)