Doping-free fabrication of n-type random network single-walled carbon nanotube field effect transistor with yttrium contacts

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 43, Issue 7, 2011, Pages 1365-1370

  Huang, Leihua ^a   Chor, Eng Fong ^a   Wu, Yihong ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AIR-STABLE; AMBIPOLAR; AMBIPOLAR CHARACTERISTICS; HOLE CURRENT; LOW WORK FUNCTION; ON/OFF CURRENT RATIO; P-TYPE; RANDOM NETWORK; REPRODUCIBILITIES; SCHOTTKY BARRIERS; SINGLE-WALLED CARBON NANOTUBE FIELD EFFECT TRANSISTORS; SOURCE AND DRAINS; TETRAFLUOROBORATES;

DISTILLATION; MESFET DEVICES; SCHOTTKY BARRIER DIODES; SINGLE-WALLED CARBON NANOTUBES (SWCN); YTTRIUM;

YTTRIUM ALLOYS;

EID: 79955876002     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2011.03.020     Document Type: Article

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