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Applied Physics Letters

Volumn 92, Issue 24, 2008, Pages

Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors

(7) Izard, N a Kazaoui, S a Hata, K a Okazaki, T a Saito, T a Iijima, S a Minami, N a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CARBON; CENTRIFUGATION; CLADDING (COATING); COMPUTER NETWORKS; CUBIC BORON NITRIDE; ELECTRIC CONDUCTIVITY; ELECTROPHORESIS; FIELD EFFECT TRANSISTORS; FULLERENES; INTELLIGENT MATERIALS; MEASUREMENTS; MESFET DEVICES; METROPOLITAN AREA NETWORKS; NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; NETWORK PROTOCOLS; PHOTOACOUSTIC EFFECT; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SINGLE-WALLED CARBON NANOTUBES (SWCN); SPIN COATING; TOLUENE; TRANSISTORS; WALLS (STRUCTURAL PARTITIONS);

APPLIED (CO); DIELECTROPHORESIS (DEP); ELECTRICAL MEASUREMENTS; FIELD EFFECTS; METALLIC NANOTUBES; NANOTUBE NETWORKS; OFF CURRENT (IOFF); OPTICAL ABSORPTION (OA); P-TYPE SEMICONDUCTORS; POLYFLUORENE (PF); RAMAN MEASUREMENTS; SINGLE WALL CARBON NANOTUBE (SWNT); SINGLE WALL CARBON NANOTUBES (SWCNTS); ULTRACENTRIFUGATION;

CARBON NANOTUBES;

EID: 45749138358 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2939560 Document Type: Article

Times cited : (146)

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