Crossed nanotube junctions

Science

Volumn 288, Issue 5465, 2000, Pages 494-497

  Fuhrer, M S ^a   Nygard J ^a   Shih, L ^a   Forero, M ^a   Yoon, Young Gui ^a   Mazzoni, M S C ^a   Choi, Hyoung Joon ^b   Ihm, Jisoon ^b   Louie, Steven G ^a   Zettl, A ^a   McEuen, Paul L ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; CONDUCTANCE; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTRONICS; PRIORITY JOURNAL; SEMICONDUCTOR; TEMPERATURE DEPENDENCE;

EID: 0343183132     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.288.5465.494     Document Type: Article

References (22)

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12. 2 surface by electron beam lithography. SWNTs synthesized by laser ablation were ultrasonically suspended in dichloroethane, and the resulting suspension was placed on the substrate for approximately 15 s, then washed off with isopropanol. An AFM operating in tapping mode was used to locate favorably arranged, crossed SWNTs relative to the alignment marks on the substrate. Objects whose height profile was consistent with single SWNTs (≈1.4 nm) were preferentially selected, but some devices consisting of small bundles of SWNTs (<3 nm) were also fabricated, with similar results. After locating the desired SWNT crosses, electron beam resist [poly-(methylmethacrylate)] was applied over the substrate, and Cr/Au electrical contacts were fabricated on top of the SWNTs using a standard liftoff electron beam lithography technique.
13. M. S. Dresselhaus, C. Dresselhaus, P. C. Eklund, Science of Fullerenes and Carbon Nanotubes (Academic Press, San Diego, CA, 1996).
14. We expect that the temperature dependence of the MM junction tunnel conductance should show signatures of Luttinger Liquid (LL) effects [M. Bockrath et al., Nature 397, 598 (1999); Z. Yao, H. W. Ch. Postma, L. Balents, C. Dekker, Nature 402, 273 (1999)]. However, we observe a somewhat stronger temperature dependence than that expected for LL-LL tunneling in MM junctions measured at low temperatures, most likely due to Coulomb blockade in the individual SWNTs.
15. We expect that the temperature dependence of the MM junction tunnel conductance should show signatures of Luttinger Liquid (LL) effects [M. Bockrath et al., Nature 397, 598 (1999); Z. Yao, H. W. Ch. Postma, L. Balents, C. Dekker, Nature 402, 273 (1999)]. However, we observe a somewhat stronger temperature dependence than that expected for LL-LL tunneling in MM junctions measured at low temperatures, most likely due to Coulomb blockade in the individual SWNTs.
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19. barrier = 250 meV. We observe only weak temperature dependence of the conductance in our MS devices above 50 K.
20. -3 in the terminology of (20).
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22. 2 Materials Initiative (U.S. Department of Energy, Basic Energy Sciences, Materials Sciences Division), NSF, and the Korean Institute for Advanced Study. Supercomputer time was provided by the National Center for Supercomputing Applications and the National Partnership for Advanced Computational Infrasture. M.S.C.M acknowledges support from CNPq-Brazil.