Air-stable n -type operation of Gd-contacted carbon nanotube field effect transistors

Applied Physics Letters

Volumn 93, Issue 12, 2008, Pages

  Kim, Hyo Suk ^a   Jeon, Eun Kyoung ^a   Kim, Ju Jin ^a   So, Hye Mi ^b   Chang, Hyunju ^b   Lee, Jeong O ^b   Park, Noejung ^c  

^a Chonbuk National University   (South Korea)

^b Korea Research Institute of Chemical Technology   (South Korea)

^c Dankook University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CARBON NANOTUBES; ELECTRONIC STRUCTURE; GADOLINIUM; MESFET DEVICES; MOLECULAR BEAM EPITAXY; NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; NONMETALS; OPTICAL DESIGN; OXYGEN; SINGLE-WALLED CARBON NANOTUBES (SWCN); TRANSISTORS;

AIR MOLECULES; AMBIENT ATMOSPHERE; BINDING AFFINITIES; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; ELECTRONIC-STRUCTURE CALCULATIONS; FIRST-PRINCIPLES; OPERATION CHARACTERISTICS; SINGLE-WALLED CARBON NANOTUBE FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 52949154292     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2990642     Document Type: Article

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