Investigation of window instability in program/erase cycling of TANOS NAND flash memory

2009 IEEE International Memory Workshop, IMW '09

Volumn , Issue , 2009, Pages

  Van Den Bosch, G ^a   Breuil, L ^a   Cacciato, A ^a   Rothschild, A ^a   Jurczak, M ^a   Van Houdt, J ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COMPENSATION; ELECTRICAL STRESS; ERASE OPERATION; FIXED CHARGES; INTERFACE TRAP GENERATION; INTERFACE TRAPS; MEMORY STACK; NAND FLASH MEMORY; PROGRAM/ERASE; SI BAND GAP; TUNNEL OXIDE]; TURN-AROUNDS;

NITRIDES; WIND TUNNELS; WINDOWS;

FLASH MEMORY;

EID: 70349979786     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2009.5090596     Document Type: Conference Paper

References (4)

1. Y. Park et al., 2006 IEDM Tech. Dig., p. 29
2. S. Choi et al., 2008 IEDM Tech. Dig., p. 925
3. J.-D. Lee et al., Proc. 2003 IRPS, p. 497
4. G. Van den bosch et al., Proc. 2008 NVSMW-ICMTD, p. 128