Performance and reliability of HfAlOx-based interpoly dielectrics for floating-gate Flash memory

Solid-State Electronics

Volumn 52, Issue 4, 2008, Pages 557-563

  Govoreanu, B ^a   Wellekens, D ^a   Haspeslagh, L ^a   Brunco, D P ^b   De Vos, J ^a   Aguado, D Ruiz ^a,d   Blomme, P ^a   van der Zanden, K ^c   Van Houdt, J ^a  

^a IMEC   (Belgium)

^b Intel Corporation Belgium   (Belgium)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Degas; Flash memory; Floating gate; Hafnium aluminate; HfAlOx; High k materials; Interpoly dielectrics; Metal gate

Indexed keywords

DEGASSING; DIELECTRIC MATERIALS; FLASH MEMORY; RELIABILITY THEORY; VOLTAGE MEASUREMENT;

FLOATING GATES; HAFNIUM ALUMINATE; HIGH-K MATERIALS; INTERPOLY DIELECTRICS; METAL GATES;

HAFNIUM COMPOUNDS;

EID: 40849097324     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.01.012     Document Type: Article

References (9)

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