Improving the retention and endurance characteristics of charge-trapping memory by using double quantum barriers

IEEE Transactions on Electron Devices

Volumn 55, Issue 7, 2008, Pages 1708-1713

  Lin, S H ^a   Yang, H J ^b   Chen, W B ^b   Yeh, F S ^a   McAlister, Sean P ^c   Chin, Albert ^b,d  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^d Nano Electronics Consortium of Taiwan   (Taiwan)

Author keywords

Erase; High k; Nonvolatile memory; Program

Indexed keywords

CHARGE TRAPPING; IRIDIUM; TANTALUM COMPOUNDS;

DOUBLE QUANTUM (DQ); ENDURANCE CHARACTERISTICS;

FLASH MEMORY;

EID: 46649088331     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.924435     Document Type: Article

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