High field transport in GaN/AlGaN heterostructures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 2045-2050

  Barker, J M ^a   Ferry, D K ^a   Goodnick, S M ^a   Koleske, D D ^b   Allerman, A ^b   Shul, R J ^b  

^a AZ 85281   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRIFT VELOCITY; OPTICAL PHONONS; PHONON DISTRIBUTION; TRANSISTOR DEPLETION;

COMPUTER SIMULATION; ELECTRON BEAMS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVES; MONTE CARLO METHODS; PHONONS; PIEZOELECTRICITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON NITRIDE; SURFACE TREATMENT;

HETEROJUNCTIONS;

EID: 4944228367     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1775199     Document Type: Conference Paper

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