Novel high drain breakdown voltage AlGaN/GaN HFETs using selective thermal oxidation process

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 377-380

  Masato, H ^a   Ikeda, Y ^a   Matsuno, T ^a   Inoue, K ^a   Nishii, K ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMOOXIDATION; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDES; DRAIN CURRENTS; HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFET);

FIELD EFFECT TRANSISTORS;

EID: 0034453895     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Monte Carlo calculation of electron initiated impact ionization in bulk zinc blend and wurtzeit GaN
2. Monte Carlo simulation of electron transport in gallium nitride
3. Piezoelectric charge densities in AlGaN/GaN HFETs
4. High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates
5. High power 10GHz operation of AlGaN HFET's on insulating SiC
6. Short channel AlGaN/GaN MODFET's with 50GHz Ft and 1.7W/mm output power at 10GHz
7. CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10GHz and 15GHz