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Volumn 119, Issue , 2011, Pages 95-130

Development and application of Er-doped silicon-rich silicon nitrides and Er silicates for on-chip light sources

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EID: 79955407248     PISSN: 03034216     EISSN: 14370859     Source Type: Book Series    
DOI: 10.1007/978-3-642-10506-7_4     Document Type: Article
Times cited : (5)

References (88)
  • 28
    • 0024668337 scopus 로고
    • Luminescence of erbium implanted in various semiconductors: IV, III-V, and II-VI materials
    • P.N. Favennec, H.L' Haridon, M. Salvi, D. Moutonnet, Y. Le Guillou, Luminescence of erbium implanted in various semiconductors: IV, III-V, and II-VI materials. Electron. Lett. 25, 718 (1989)
    • (1989) Electron. Lett , vol.25 , pp. 718
    • Favennec, P.N.1    L'Haridon, H.2    Salvi, M.3    Moutonnet, D.4    Le Guillou, Y.5
  • 62
    • 0006356234 scopus 로고    scopus 로고
    • JCPDS, ICDD Card No. 00-052-1809 (Er2SiO5), No. 00-052-1810 (Y2SiO5)
    • JCPDS, International Center for Diffraction Data (www.icdd.com), ICDD Card No. 00-052-1809 (Er2SiO5), No. 00-052-1810 (Y2SiO5)
    • International Center for Diffraction Data


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.