Ultrafast photoluminescence dynamics of nitride-passivated silicon nanocrystals using the variable stripe length technique

Applied Physics Letters

Volumn 91, Issue 17, 2007, Pages

  Chen, Hui ^a   Shin, Jung H ^a,b   Fauchet, Philippe M ^a   Sung, Joo Yeon ^b   Shin, Jae Heon ^c   Sung, Gun Yong ^c  

^a UNIVERSITY OF ROCHESTER   (United States)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GEOMETRY; NITRIDES; OPTICAL GAIN; PASSIVATION; PHOTOLUMINESCENCE; SILICON COMPOUNDS; ULTRAFAST PHENOMENA; ULTRASHORT PULSES;

FEMTOSECOND PUMP PULSES; SILICON NANOCRYSTALS; ULTRAFAST PHOTOLUMINESCENCE DYNAMICS; VARIABLE STRIPE LENGTH;

NANOCRYSTALS;

EID: 35549001349     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2803071     Document Type: Article

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