High efficiency visible electroluminescence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer

Applied Physics Letters

Volumn 86, Issue 7, 2005, Pages 1-3

  Cho, Kwan Sik ^a,b   Park, Nae Man ^a   Kim, Tae Youb ^a   Kim, Kyung Hyun ^a   Sung, Gun Yong ^a   Shin, Jung H ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; CURRENT DENSITY; HOLE MOBILITY; LIGHT EMITTING DIODES; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTOR DOPING; SILICON CARBIDE; SILICON NITRIDE;

DOPING LAYERS; ELECTRON-HOLE; EXTERNAL QUANTUM EFFICIENCY (EQE); NANOCRYSTALS;

ELECTROLUMINESCENCE;

EID: 17044375507     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1866638     Document Type: Article

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