Net optical gain at 1.53 μm in Er-doped Al2O3 waveguides on silicon

Applied Physics Letters

Volumn 68, Issue 14, 1996, Pages 1886-1888

  Van Den Hoven, G N ^a   Koper, R J I M ^a   Polman, A ^a   Van Dam, C ^b   Van Uffelen, J W M ^b   Smit, M K ^b  

^a FOM INSTITUTE AMOLF   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; AMPLIFIERS (ELECTRONIC); ELECTRON ABSORPTION; ERBIUM; FREQUENCY DIVISION MULTIPLEXING; GAIN MEASUREMENT; ION IMPLANTATION; MATHEMATICAL MODELS; OPTICAL PUMPING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS;

EXCITED STATE ABSORPTION; HIGH INDEX CONTRAST; OPTICAL GAIN; UPCONVERSION; WAVEGUIDE AMPLIFIERS; WAVELENGTH DIVISION MULTIPLEXERS;

WAVEGUIDES;

EID: 0030126356     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116283     Document Type: Article

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