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Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

Direct comparison of boron, phosphorus, and aluminum gettering of iron in crystalline silicon

(2) Phang, S P a MacDonald, D a

a AUSTRALIAN NATIONAL UNIVERSITY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM FILM; ALUMINUM GETTERING; BORON DIFFUSIONS; CRYSTALLINE SILICONS; DEPOSITION CONDITIONS; DIFFUSION TEMPERATURE; GAS-FLOW RATIO; GETTERING; INTERSTITIAL IRON; LOW TEMPERATURE ANNEALING; PHOSPHORUS DIFFUSION; POST-OXIDATION; QUANTITATIVE COMPARISON;

ALLOYING; ALUMINUM; BORON; BORON COMPOUNDS; CRYSTALLINE MATERIALS; DIFFUSION IN SOLIDS; ELECTRIC RESISTANCE; IRON; PHOSPHORUS;

ALUMINUM ALLOYS;

EID: 79955367543 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3569890 Document Type: Conference Paper

Times cited : (84)

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