Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon

Applied Physics Letters

Volumn 89, Issue 14, 2006, Pages

  MacDonald, D ^a   Roth, T ^a,c   Deenapanray, P N K ^a   Trupke, T ^b   Bardos, R A ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIMES; DOPANT CONCENTRATION; PHOTOCONDUCTANCE; SHOCKLEY-READ-HALL MODEL;

BORON; CARRIER CONCENTRATION; DISSOCIATION; DOPING (ADDITIVES); IRON; PHOTOLUMINESCENCE; SILICON;

CRYSTALLINE MATERIALS;

EID: 33749489361     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2358126     Document Type: Article

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