Modeling phosphorus diffusion gettering of iron in single crystal silicon

Journal of Applied Physics

Volumn 105, Issue 2, 2009, Pages

  Haarahiltunen, A ^a   Savin, H ^a   Yli Koski, M ^a   Talvitie, H ^a   Sinkkonen, J ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

PHOSPHORUS; SILICON WAFERS; SINGLE CRYSTALS;

EXPERIMENTAL DATUM; FITTING PROCEDURES; GETTERING; GETTERING EFFICIENCIES; PHOSPHORUS DIFFUSIONS; PROCESSING CONDITIONS; QUANTITATIVE ANALYSIS; QUANTITATIVE MODELS; SEGREGATION COEFFICIENTS; SINGLE CRYSTAL SILICONS;

IRON ANALYSIS;

EID: 59349108600     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3068337     Document Type: Article

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