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Volumn 127-128, Issue , 1997, Pages 291-296

Metal gettering by boron-silicide precipitates in boron-implanted silicon

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; BORON; CRYSTAL IMPURITIES; FREE ENERGY; GETTERS; ION IMPLANTATION; PRECIPITATION (CHEMICAL); SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0031547949     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00942-1     Document Type: Article
Times cited : (21)

References (14)
  • 8
    • 0004246662 scopus 로고
    • INSPEC, London
    • Properties of Silicon (INSPEC, London, 1988) pp. 430-451.
    • (1988) Properties of Silicon , pp. 430-451
  • 12


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.