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Volumn 131-133, Issue , 2008, Pages 399-404
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Study of gettering mechanisms in silicon: Competitive gettering between phosphorus diffusion gettering and other gettering sites
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Author keywords
BMD; Competitive gettering; Cu; Fe; Gettering mechanism; ICP MS; Lifetimes; Multicrystalline; Ni; Phosphorus diffusion gettering; Segregation coefficient
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Indexed keywords
CONCENTRATION (PROCESS);
DISLOCATIONS (CRYSTALS);
GETTERS;
SEGREGATION (METALLOGRAPHY);
THERMAL DIFFUSION;
BORON;
COPPER;
CRYSTALLINE MATERIALS;
DEFECTS;
DIFFUSION;
IRON;
MONOCRYSTALLINE SILICON;
NICKEL;
NICKEL-PHOSPHORUS;
PHOSPHORUS;
REMOVAL;
SEMICONDUCTOR DEVICE MANUFACTURE;
SILICON WAFERS;
COMPETITIVE GETTERING;
GETTERING MECHANISM;
PHOSPHORUS DIFFUSION GETTERING;
SEGREGATION COEFFICIENTS;
GETTERING;
ICP-MS;
LIFETIMES;
MULTICRYSTALLINE;
SEMICONDUCTING SILICON;
SEGREGATION (METALLOGRAPHY);
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EID: 38549103594
PISSN: 10120394
EISSN: None
Source Type: Book Series
DOI: None Document Type: Conference Paper |
Times cited : (45)
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References (16)
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