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Volumn 131-133, Issue , 2008, Pages 399-404

Study of gettering mechanisms in silicon: Competitive gettering between phosphorus diffusion gettering and other gettering sites

Author keywords

BMD; Competitive gettering; Cu; Fe; Gettering mechanism; ICP MS; Lifetimes; Multicrystalline; Ni; Phosphorus diffusion gettering; Segregation coefficient

Indexed keywords

CONCENTRATION (PROCESS); DISLOCATIONS (CRYSTALS); GETTERS; SEGREGATION (METALLOGRAPHY); THERMAL DIFFUSION; BORON; COPPER; CRYSTALLINE MATERIALS; DEFECTS; DIFFUSION; IRON; MONOCRYSTALLINE SILICON; NICKEL; NICKEL-PHOSPHORUS; PHOSPHORUS; REMOVAL; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

EID: 38549103594     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper
Times cited : (45)

References (16)
  • 2
    • 84902896331 scopus 로고    scopus 로고
    • M. B. Shabani, Y. Shiina and Y. Shimanuki, in High Purity Silicon, C. L. Claeys P. Rai-Choudhury, The Electrochchem. Sco. Proceeding Series, Penninton, NJ 2000-17, p. 305
    • M. B. Shabani, Y. Shiina and Y. Shimanuki, in High Purity Silicon, C. L. Claeys P. Rai-Choudhury, The Electrochchem. Sco. Proceeding Series, Penninton, NJ 2000-17, p. 305
  • 7
    • 0036131715 scopus 로고    scopus 로고
    • M. B. Shabani, Y. Shiina, Y. Shimanuki and F. G. kirscht, Solid State Phenomena, 82-84 (Gadest 2001), p. 331
    • M. B. Shabani, Y. Shiina, Y. Shimanuki and F. G. kirscht, Solid State Phenomena, 82-84 (Gadest 2001), p. 331
  • 9
    • 84902931513 scopus 로고    scopus 로고
    • M. B. Shabani, T. Yoshimi, S. Okuuchi and H. Abe, Solid State Phenomena, 57-58 (Gadest 1997), p. 331
    • M. B. Shabani, T. Yoshimi, S. Okuuchi and H. Abe, Solid State Phenomena, 57-58 (Gadest 1997), p. 331
  • 12
    • 84902918073 scopus 로고    scopus 로고
    • Unpublished data
    • M. B. Shabani, Unpublished data.
    • Shabani, M.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.