Black silicon with high density and high aspect ratio nanowhiskers

Nanotechnology

Volumn 22, Issue 23, 2011, Pages

  Kalem, S ^a   Werner, P ^b   Arthursson, O ^c   Talalaev, V ^b   Nilsson, B ^c   Hagberg, M ^c   Frederiksen, H ^c   Sodervall U ^c  

^a SCIENTIFIC AND TECHNOLOGICAL RESEARCH COUNCIL OF TURKEY   (Turkey)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BLACK SILICON; CONFINEMENT EFFECTS; EFFECTIVE TOOL; ELECTRICAL PHENOMENA; FIELD EMISSION PROPERTY; FORMATION MECHANISM; HIGH ASPECT RATIO; HIGH DENSITY; INFRARED VIBRATIONAL SPECTRA; NEAR BAND EDGE EMISSIONS; OPTICAL MODES; OVERALL PROPERTIES; SI OXIDE; SI WAFER; STRUCTURAL QUALITIES; SUBMICRON; TIP SHAPE; VISIBLE REGION;

ASPECT RATIO; CHLORINE; CRYSTAL WHISKERS; ELECTRIC PROPERTIES; FIELD EMISSION; NANOWHISKERS; PHONONS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON; STRUCTURAL ANALYSIS;

SILICON WAFERS;

EID: 79954595649     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/23/235307     Document Type: Article

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