Electron-phonon coupling and localization of excitons in single silicon nanocrystals

Nano Letters

Volumn 8, Issue 2, 2008, Pages 656-660

  Martin, Jörg ^a,b   Cichos, Frank ^a,c   Huisken, Friedrich ^d,e   Von Borczyskowski, Christian ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b FRAUNHOFER IZM   (Germany)

^c UNIVERSITY OF LEIPZIG   (Germany)

^d MAX PLANCK INSTITUT FÜR ASTRONOMIE   (Germany)

^e FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BOHR RADII; ELECTRON-PHONON COUPLING; ELECTRONPHONON COUPLING; PHONON TRANSITIONS;

BOND LENGTH; NANOCRYSTALS; PHONONS; PHOTOLUMINESCENCE SPECTROSCOPY; SILICA; SILICON;

EXCITONS;

NANOMATERIAL; SILICON;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRON; ELECTRON TRANSPORT; LIGHT; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; PHOTON; RADIATION DOSE;

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; ELECTRONS; LIGHT; MATERIALS TESTING; MODELS, CHEMICAL; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; PHOTONS; RADIATION DOSAGE; SILICON;

EID: 40449126494     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0731163     Document Type: Article

References (27)

1. Lockwood, D. J., Ed. Light Emission in Silicon: From Physics to DeVices; Academic Press: New York, 1998.
2. Heitmann, J.; Müller, F.; Zacharias, L.; Yi, M.; Kovalev, D.; Eichhorn, F. Phys. ReV. B 2004, 69, 195309.
3. Canham, L. T. Appl. Phys. Lett. 1990, 57, 1046.
4. Cheylan, S.; Elliman, R.; Gaff, K.; Durandet, A. Appl. Phys. Lett. 2001, 78, 1670.
5. Valenta, J.; Juhasz, R.; Linnros, J. Appl. Phys. Lett. 2002, 80, 1070.
6. Ledoux, G.; Gong, J.; Huisken, F.; Guillois, O.; Reynaud, C. Appl. Phys. Lett. 2002, 80, 4834.
7. Wolkin, M. V.; Jorne, J.; Fauchet, P. M.; Allan, G.; Delerue, C. Phys. ReV. Lett. 1999, 82, 197.
8. Garrido, B.; López, M.; Pérez-Rodrígez, A.; García, C.; Pellegrino, P., et al. Nucl. Instrum. Methods Phys. Res., Sect. B 2004, 216, 213.
9. Cichos, F.; Martin, J.; von Borczyskowski, C. Phys. ReV. B 2004, 70, 115314.
10. Martin, J.; Cichos, F.; von Borczyskowski, C. J. Luminesc. 2004, 108, 347.
11. Mason, M. D.; Credo, G. M.; Weston, K. D.; Buratto, S. K. Phys. ReV. Lett. 1998, 80, 5405.
12. Martin, J.; Cichos, F.; Chan, I. Y.; Huisken, F.; von Borczyskowski, C. Isr. J. Chem. 2004, 44, 341.
13. English, D. S.; Pell, L. E.; Yu, Z.; Barbara, P. F.; Korgel, B. A. Nano Lett. 2002, 2, 681.
14. Hofmeister, H.; Huisken, F.; Kohn, B. Eur. Phys. J. D 1999, 9, 137.
15. Huisken, F.; Ledoux, G.; Guillois, O.; Reynaud, C. AdV. Mater. 2002, 14, 1861.
16. Kirk, C. T. Phys. ReV. B 1988, 38, 1255.
17. Sychugov, I.; Juhasz, R.; Valenta, J.; Linnros, J. Phys. ReV. Lett. 2005, 94, 087405.
18. Sa'ar, A.; Reichman, Y.; Dovrat, M.; Krapf, D.; Jedrzejewski, J.; Balberg, I. Nano Lett. 2005, 5, 2443.
19. Vial, J. C.; Bsiesy, A.; Gaspard, F.; Hérino, R.; Ligeon, M., et al. Phys. ReV. B 1992, 45, 14171.
20. Klein, M. C.; Hache, F.; Ricard, D.; Flytzanis, C. Phys. ReV. B 1990, 42, 11123.
21. de Maat-Gersdorf, I.; Gregorkiewicz, T.; Ammerlaan, C. A. J.; Sobolev, N. A. Semicond. Sci. Technol. 1995, 10, 666.
22. Delerue, C.; Allan, G.; Lanoo, M. Phys. ReV. B 1993, 48, 11024.
23. Woggon, U.; Lüthgens, E.; Wenisch, H.; Hommel, D. Phys. ReV. B 2001, 63, 073205.
24. Trwoga, P. F.; Kenyon, A. J.; Pitt, C. W. J. Appl. Phys. 1998, 83, 3789.
25. Xia, J. B. Phys. ReV. B 1989, 40, 8500.
26. Nirmal, M.; Murray, C. B.; Bawendi, M. G. Phys. ReV. B 1994, 50, 2293.
27. Ledoux, G.; Guillois, O.; Porterat, D.; Reynaud, C.; Huisken, F.; Kohn, B.; Paillard, V. Phys. ReV. B 2000, 62, 15942.