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Volumn 41, Issue 6, 2009, Pages 963-965
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Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition
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Author keywords
Electron hole plasma; Exciton; Nanowires; Photoluminescence; Silicon
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Indexed keywords
A THERMALS;
AS-GROWN;
BULK SILICONS;
CHEMICAL VAPOR DEPOSITION METHODS;
ELECTRON-HOLE PLASMAS;
ELECTRON-HOLE-PLASMA;
ELECTRONIC SYSTEMS;
ENERGY BAND GAPS;
FREE CARRIER RECOMBINATIONS;
FREE EXCITONS;
GAP ENERGIES;
LOW ENERGIES;
PHOTO-LUMINESCENCE MEASUREMENTS;
PUMP POWER;
RADIATIVE EMISSIONS;
RADIATIVE STATE;
RECOMBINATION ENERGIES;
SILICON NANOWIRES;
SOI STRUCTURES;
SPATIAL CONFINEMENTS;
VAPOR-LIQUID-SOLID MECHANISMS;
CHEMICAL VAPOR DEPOSITION;
ELECTRIC WIRE;
EMISSION SPECTROSCOPY;
EXCITONS;
NANOWIRES;
NONMETALS;
PHOTOLUMINESCENCE;
PLASMAS;
VAPORS;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 67349220132
PISSN: 13869477
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physe.2008.08.054 Document Type: Article |
Times cited : (16)
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References (15)
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