Temperature dependence of photoluminescence in silicon quantum dots

Journal of Physics D: Applied Physics

Volumn 40, Issue 12, 2007, Pages 3573-3578

  Wen, Xiaoming ^a,b   Van Dao, Lap ^a   Hannaford, Peter ^a  

^a SWINBURNE UNIVERSITY OF TECHNOLOGY   (Australia)

^b YUNNAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; LOW TEMPERATURE EFFECTS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM CONFINEMENT; SILICON; WAVELENGTH;

DEFECT STATES; LUMINESCENCE BANDS; TEMPERATURE DEPENDENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34547372438     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/12/005     Document Type: Article

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