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Volumn 98, Issue 14, 2011, Pages

UV nanoimprint lithography for the realization of large-area ordered SiGe/Si(001) island arrays

(9) Lausecker, E a Brehm, M a Grydlik, M a Hackl, F a Bergmair, I b Muhlberger M b Fromherz, T a Schaffler F a Bauer, G a

a JOHANNES KEPLER UNIVERSITY LINZ (Austria)

b PROFACTOR GMBH (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; PATTERNED ARRAYS; PHOTOLUMINESCENCE MEASUREMENTS; SIGE/SI; SILICON GERMANIUM; SILICON SUBSTRATES; UV NANOIMPRINT LITHOGRAPHY;

ATOMIC FORCE MICROSCOPY; GERMANIUM;

NANOIMPRINT LITHOGRAPHY;

EID: 79954458877 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3575554 Document Type: Article

Times cited : (31)

References (31)

1
- 0030570065
- 0036-8075, 10.1126/science.272.5258.85
- S. Y. Chou, P. R. Krauss, and P. J. Renstrom, Science 0036-8075 272, 85 (1996). 10.1126/science.272.5258.85
- (1996) Science , vol.272 , pp. 85
- Chou, S.Y.¹ Krauss, P.R.² Renstrom, P.J.³

2
- 3242676271
- 0003-6951, 10.1063/1.1766071
- M. D. Austin, H. Ge, W. Wu, M. Li, Z. Yu, D. Wasserman, S. A. Lyon, and S. Y. Chou, Appl. Phys. Lett. 0003-6951 84, 5299 (2004). 10.1063/1.1766071
- (2004) Appl. Phys. Lett. , vol.84 , pp. 5299
- Austin, M.D.¹ Ge, H.² Wu, W.³ Li, M.⁴ Yu, Z.⁵ Wasserman, D.⁶ Lyon, S.A.⁷ Chou, S.Y.⁸

3
- 34248172127
- International Technology Roadmap for Semiconductors, http://www.itrs.net/ reports.html, 2003.
- (2003) International Technology Roadmafor Semiconductors

4
- 5344268855
- 1071-1023, 10.1116/1.588604
- J. Haisma, M. Verheijen, K. d. Heuvel, and J. d. Berg, J. Vac. Sci. Technol. B 1071-1023 14, 4124 (1996). 10.1116/1.588604
- (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 4124
- Haisma, J.¹ Verheijen, M.² Heuvel, K.D.³ Berg, J.D.⁴

5
- 33846225236
- Sub-20-nm alignment in nanoimprint lithography using moiré fringe
- DOI 10.1021/nl0603395
- N. Li, W. Wu, and S. Y. Chou, Nano Lett. 1530-6984 6, 2626 (2006). 10.1021/nl0603395 (Pubitemid 46090703)
- (2006) Nano Letters , vol.6 , Issue.11 , pp. 2626-2629
- Li, N.¹ Wu, W.² Chou, S.Y.³

6
- 34247628469
- A Moiré method for high accuracy alignment in nanoimprint lithography
- DOI 10.1016/j.mee.2007.01.081, PII S0167931707000640, Proceedings of the 32nd International Conference on Micro- and Nano-Engineering
- M. Mühlberger, I. Bergmair, W. Schwinger, M. Gmainer, R. Schöftner, T. Glinsner, Ch. Hasenfuβ, K. Hingerl, M. Vogler, H. Schmidt, and E. B. Kley, Microelectron. Eng. 0167-9317 84, 925 (2007). 10.1016/j.mee.2007.01.081 (Pubitemid 46678316)
- (2007) Microelectronic Engineering , vol.84 , Issue.5-8 , pp. 925-927
- Muhlberger, M.¹ Bergmair, I.² Schwinger, W.³ Gmainer, M.⁴ Schoftner, R.⁵ Glinsner, T.⁶ Hasenfuss, Ch.⁷ Hingerl, K.⁸ Vogler, M.⁹ Schmidt, H.¹⁰ Kley, E.B.¹¹

7
- 0035367479
- Self-assembled Ge/Si dots for faster field-effect transistors
- DOI 10.1109/16.925244, PII S0018938301042186
- O. G. Schmidt and K. Eberl, IEEE Trans. Electron Devices 0018-9383 48, 1175 (2001). 10.1109/16.925244 (Pubitemid 32576952)
- (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.6 , pp. 1175-1179
- Schmidt, O.G.¹ Eberl, K.²

8
- 67449136398
- 0018-9219, 10.1109/JPROC.2009.2020711
- L. Tsybeskov and D. J. Lockwood, Proc. IEEE 0018-9219 97, 1284 (2009). 10.1109/JPROC.2009.2020711
- (2009) Proc. IEEE , vol.97 , pp. 1284
- Tsybeskov, L.¹ Lockwood, D.J.²

9
- 77957581405
- 0741-3106, 10.1109/LED.2010.2058995
- V. Jovanović, C. Biasotto, L. K. Nanver, J. Moers, D. Grützmacher, J. Gerharz, G. Mussler, J. d. Cingel, J. J. Zhang, G. Bauer, O. G. Schmidt, and L. Miglio, IEEE Electron Device Lett. 0741-3106 31, 1083 (2010). 10.1109/LED.2010.2058995
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 1083
- Jovanović, V.¹ Biasotto, C.² Nanver, L.K.³ Moers, J.⁴ Grützmacher, D.⁵ Gerharz, J.⁶ Mussler, G.⁷ Cingel, J.D.⁸ Zhang, J.J.⁹ Bauer, G.¹⁰ Schmidt, O.G.¹¹ Miglio, L.¹²

10
- 0031237188
- 0003-6951, 10.1063/1.119625
- T. I. Kamins and R. S. Williams, Appl. Phys. Lett. 0003-6951 71, 1201 (1997). 10.1063/1.119625
- (1997) Appl. Phys. Lett. , vol.71 , pp. 1201
- Kamins, T.I.¹ Williams, R.S.²

11
- 0000196598
- 0003-6951, 10.1063/1.126716
- G. Jin, J. L. Liu, and K. L. Wang, Appl. Phys. Lett. 0003-6951 76, 3591 (2000). 10.1063/1.126716
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3591
- Jin, G.¹ Liu, J.L.² Wang, K.L.³

12
- 0032023480
- Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties
- DOI 10.1063/1.121131, PII S0003695198004136
- E. S. Kim, N. Usami, and Y. Shiraki, Appl. Phys. Lett. 0003-6951 72, 1617 (1998). 10.1063/1.121131 (Pubitemid 128671408)
- (1998) Applied Physics Letters , vol.72 , Issue.13 , pp. 1617-1619
- Kim, E.S.¹ Usami, N.² Shiraki, Y.³

13
- 0038782334
- 0003-6951, 10.1063/1.1581986
- Z. Zhong, A. Halilovic, T. Fromherz, F. Schäffler, and G. Bauer, Appl. Phys. Lett. 0003-6951 82, 4779 (2003). 10.1063/1.1581986
- (2003) Appl. Phys. Lett. , vol.82 , pp. 4779
- Zhong, Z.¹ Halilovic, A.² Fromherz, T.³ Schäffler, F.⁴ Bauer, G.⁵

14
- 33845431560
- edited by O. G. Schmidt (Springer, Berlin).
- Lateral Alignment of Epitaxial Quantum Dots, edited by, O. G. Schmidt, (Springer, Berlin, 2007).
- (2007) Lateral Alignment of Epitaxial Quantum Dots

15
- 59449107886
- 0031-9007, 10.1103/PhysRevLett.102.025502
- T. U. Schülli, G. Vastola, M. -I. Richard, A. Malachias, G. Renaud, F. Uhlík, F. Montalenti, G. Chen, L. Miglio, F. Schäffler, and G. Bauer, Phys. Rev. Lett. 0031-9007 102, 025502 (2009). 10.1103/PhysRevLett.102. 025502
- (2009) Phys. Rev. Lett. , vol.102 , pp. 025502
- Schülli, T.U.¹ Vastola, G.² Richard, M.-I.³ Malachias, A.⁴ Renaud, G.⁵ Uhlík, F.⁶ Montalenti, F.⁷ Chen, G.⁸ Miglio, L.⁹ Schäffler, F.¹⁰ Bauer, G.¹¹

16
- 70349986624
- 1931-7573, 10.1007/s11671-009-9360-4
- F. Pezzoli, M. Stoffel, T. Merdzhanova, A. Rastelli, and O. G. Schmidt, Nanoscale Res. Lett. 1931-7573 4, 1073 (2009). 10.1007/s11671-009-9360-4
- (2009) Nanoscale Res. Lett. , vol.4 , pp. 1073
- Pezzoli, F.¹ Stoffel, M.² Merdzhanova, T.³ Rastelli, A.⁴ Schmidt, O.G.⁵

17
- 78649753234
- 1931-7573, 10.1007/s11671-010-9713-z
- M. Brehm, M. Grydlik, F. Hackl, E. Lausecker, T. Fromherz, and G. Bauer, Nanoscale Res. Lett. 1931-7573 5, 1868 (2010). 10.1007/s11671-010-9713-z
- (2010) Nanoscale Res. Lett. , vol.5 , pp. 1868
- Brehm, M.¹ Grydlik, M.² Hackl, F.³ Lausecker, E.⁴ Fromherz, T.⁵ Bauer, G.⁶

18
- 79952641888
- 0957-4484, 10.1088/0957-4484/22/16/165302
- F. Hackl, M. Grydlik, M. Brehm, H. Groiss, F. Schäffler, T. Fromherz, and G. Bauer, Nanotechnology 0957-4484 22, 165302 (2011). 10.1088/0957-4484/22/16/165302
- (2011) Nanotechnology , vol.22 , pp. 165302
- Hackl, F.¹ Grydlik, M.² Brehm, M.³ Groiss, H.⁴ Schäffler, F.⁵ Fromherz, T.⁶ Bauer, G.⁷

19
- 77953596747
- 1367-2630, 10.1088/1367-2630/12/6/063002
- M. Grydlik, M. Brehm, F. Hackl, H. Groiss, T. Fromherz, F. Schäffler, and G. Bauer, New J. Phys. 1367-2630 12, 063002 (2010). 10.1088/1367-2630/12/6/063002
- (2010) New J. Phys. , vol.12 , pp. 063002
- Grydlik, M.¹ Brehm, M.² Hackl, F.³ Groiss, H.⁴ Fromherz, T.⁵ Schäffler, F.⁶ Bauer, G.⁷

20
- 36248954606
- Three-dimensional Si/Ge quantum dot crystals
- DOI 10.1021/nl0717199
- D. Grützmacher, T. Fromherz, Ch. Dais, J. Stangl, E. Müller, Y. Ekinci, H. H. Solak, H. Sigg, R. T. Lechner, E. Wintersberger, S. Birner, V. Hol, and G. Bauer, Nano Lett. 1530-6984 7, 3150 (2007). 10.1021/nl0717199 (Pubitemid 350132945)
- (2007) Nano Letters , vol.7 , Issue.10 , pp. 3150-3156
- Grutzmacher, D.¹ Fromherz, T.² Dais, C.³ Stangl, J.⁴ Muller, E.⁵ Ekinci, Y.⁶ Solak, H.H.⁷ Sigg, H.⁸ Lechner, R.T.⁹ Wintersberger, E.¹⁰ Birner, S.¹¹ Holy, V.¹² Bauer, G.¹³

21
- 79954524640
- The BGL-GZ-83 anti-sticking layer was developed at Profactor GmbH
- The BGL-GZ-83 anti-sticking layer was developed at Profactor GmbH. Further information can be obtained from Profactor GmbH, http://www.profactor. at/en/nano/produkte-verfahren-lizenzierbares/bgl-gz-83.html.
- Further Information can be Obtained from Profactor GmbH

22
- 44149113317
- 0167-9317, 10.1016/j.mee.2007.12.079
- I. Bergmair, M. Mühlberger, M. Gusenbauer, R. Schöftner, and K. Hingerl, Microelectron. Eng. 0167-9317 85, 822 (2008). 10.1016/j.mee.2007.12. 079
- (2008) Microelectron. Eng. , vol.85 , pp. 822
- Bergmair, I.¹ Mühlberger, M.² Gusenbauer, M.³ Schöftner, R.⁴ Hingerl, K.⁵

23
- 33751510722
- Self-assembled Si and SiGe nanostructures: New growth concepts and structural analysis
- DOI 10.1002/pssa.200622405
- G. Bauer and F. Schäffler, Phys. Status Solidi 0031-8957 203, 3496 (2006). 10.1002/pssa.200622405 (Pubitemid 44829333)
- (2006) Physica Status Solidi (A) Applications and Materials , vol.203 , Issue.14 , pp. 3496-3505
- Bauer, G.¹ Schaffler, F.²

24
- 14944382151
- Fast isotropic adatom diffusion on Ge(015) dot facets
- DOI 10.1103/PhysRevB.70.245315, 245315
- F. Montalenti, D. B. Migas, F. Gamba, and L. Miglio, Phys. Rev. B 0556-2805 70, 245315 (2004). 10.1103/PhysRevB.70.245315 (Pubitemid 40362467)
- (2004) Physical Review B - Condensed Matter and Materials Physics , vol.70 , Issue.24 , pp. 1-8
- Montalenti, F.¹ Migas, D.B.² Gamba, F.³ Miglio, L.⁴

25
- 0037095512
- 0556-2805, 10.1103/PhysRevB.65.205306
- G. Biasiol, A. Gustafsson, K. Leifer, and E. Kapon, Phys. Rev. B 0556-2805 65, 205306 (2002). 10.1103/PhysRevB.65.205306
- (2002) Phys. Rev. B , vol.65 , pp. 205306
- Biasiol, G.¹ Gustafsson, A.² Leifer, K.³ Kapon, E.⁴

26
- 35549002618
- SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening
- DOI 10.1063/1.2802555
- J. J. Zhang, M. Stoffel, A. Rastelli, O. G. Schmidt, V. Jovanović, L. K. Nanver, and G. Bauer, Appl. Phys. Lett. 0003-6951 91, 173115 (2007). 10.1063/1.2802555 (Pubitemid 350015283)
- (2007) Applied Physics Letters , vol.91 , Issue.17 , pp. 173115
- Zhang, J.J.¹ Stoffel, M.² Rastelli, A.³ Schmidt, O.G.⁴ Jovanovic, V.⁵ Nanver, L.K.⁶ Bauer, G.⁷

27
- 0001157567
- 0556-2805, 10.1103/PhysRevB.40.5683
- J. Weber and M. I. Alonso, Phys. Rev. B 0556-2805 40, 5683 (1989). 10.1103/PhysRevB.40.5683
- (1989) Phys. Rev. B , vol.40 , pp. 5683
- Weber, J.¹ Alonso, M.I.²

28
- 0009937015
- 0003-6951, 10.1063/1.110048
- M. Wachter, F. Schäffler, H. -J. Herzog, K. Thonke, and R. Sauer, Appl. Phys. Lett. 0003-6951 63, 376 (1993). 10.1063/1.110048
- (1993) Appl. Phys. Lett. , vol.63 , pp. 376
- Wachter, M.¹ Schäffler, F.² Herzog, H.-J.³ Thonke, K.⁴ Sauer, R.⁵

29
- 77953557132
- 0556-2805, 10.1103/PhysRevB.80.205321
- M. Brehm, F. Montalenti, M. Grydlik, G. Vastola, H. Lichtenberger, N. Hrauda, M. J. Beck, T. Fromherz, F. Schäffler, L. Miglio, and G. Bauer, Phys. Rev. B 0556-2805 80, 205321 (2009). 10.1103/PhysRevB.80.205321
- (2009) Phys. Rev. B , vol.80 , pp. 205321
- Brehm, M.¹ Montalenti, F.² Grydlik, M.³ Vastola, G.⁴ Lichtenberger, H.⁵ Hrauda, N.⁶ Beck, M.J.⁷ Fromherz, T.⁸ Schäffler, F.⁹ Miglio, L.¹⁰ Bauer, G.¹¹

30
- 46749112324
- 1530-6984, 10.1021/nl080290y
- A. Rastelli, M. Stoffel, A. Malachias, T. Merdzhanova, G. Katsaros, K. Kern, T. H. Metzger, and O. G. Schmidt, Nano Lett. 1530-6984 8, 1404 (2008). 10.1021/nl080290y
- (2008) Nano Lett. , vol.8 , pp. 1404
- Rastelli, A.¹ Stoffel, M.² Malachias, A.³ Merdzhanova, T.⁴ Katsaros, G.⁵ Kern, K.⁶ Metzger, T.H.⁷ Schmidt, O.G.⁸

31
- 0000830082
- 0031-9007, 10.1103/PhysRevLett.66.1362
- J. C. Sturm, H. Manoharan, L. C. Lenchyshyn, M. L. W. Thewalt, N. L. Rowell, J. -P. Nol, and D. C. Houghton, Phys. Rev. Lett. 0031-9007 66, 1362 (1991). 10.1103/PhysRevLett.66.1362
- (1991) Phys. Rev. Lett. , vol.66 , pp. 1362
- Sturm, J.C.¹ Manoharan, H.² Lenchyshyn, L.C.³ Thewalt, M.L.W.⁴ Rowell, N.L.⁵ Nol, J.-P.⁶ Houghton, D.C.⁷

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