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Volumn 109, Issue 6, 2011, Pages

Determination of bandgap states in p-type In0.49Ga 0.51P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy

(5) Gonzalez M a,c Carlin, A M a Dohrman, C L b Fitzgerald, E A b Ringel, S A a

a The Ohio State University (United States)

b Massachusetts Institute of Technology (United States)

c Global Defense Technology and Systems Inc (GTEC) (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BANDGAP STATE; DEEP LEVEL OPTICAL SPECTROSCOPY; DISLOCATION DENSITIES; DLTS; GAAS; GAAS SUBSTRATES; HIGH CONCENTRATION; HIGH EFFICIENCY; LATTICE-MATCHED; LOW-DISLOCATION DENSITY; MINORITY CARRIER DEVICES; MINORITY-CARRIER ELECTRONS; MISMATCHED SUBSTRATES; MULTI JUNCTION SOLAR CELLS; OPTICAL EMISSIONS; P-TYPE; PRIMARY EFFECTS; SI-BASED; SIGE/SI; SINGLE HOLE; SUBSTRATE TYPES; THERMAL EMISSIONS; TRAP BEHAVIOR; TRAP CONCENTRATION;

CARRIER CONCENTRATION; CONCENTRATION (PROCESS); DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY GAP; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; SUBSTRATES;

GALLIUM ALLOYS;

EID: 79953647822 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3559739 Document Type: Article

Times cited : (8)

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