Characterization of majority and minority carrier deep levels in p -type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

Journal of Applied Physics

Volumn 103, Issue 6, 2008, Pages

  Armstrong, A ^a,c   Caudill, J ^a   Corrion, A ^b   Poblenz, C ^b   Mishra, U K ^b   Speck, J S ^b   Ringel, S A ^a  

^a The Ohio State University   (United States)

^b University of California   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL OPTICAL SPECTROSCOPY (DLOS); STEADY-STATE PHOTOCAPACITANCE;

DISPERSIONS; EMISSION SPECTROSCOPY; MAGNESIUM; MOLECULAR BEAM EPITAXY;

GALLIUM NITRIDE;

EID: 41549119959     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2891673     Document Type: Article

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