Majority- and minority-carrier deep level traps in proton-irradiated n +/p-InGaP space solar cells

Applied Physics Letters

Volumn 81, Issue 1, 2002, Pages 64-66

  Dharmarasu, Nethaji ^a   Yamaguchi, Masafumi ^a   Bourgoin, Jacques C ^b   Takamoto, Tatsuya ^c   Ohshima, Takeshi ^d   Itoh, Hisayoshi ^d   Imaizumi, Mitsuru ^e   Matsuda, Sumio ^e  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b SORBONNE UNIVERSITÉ   (France)

^c JAPAN ENERGY CORPORATION   (Japan)

^d JAPAN ATOMIC ENERGY AGENCY   (Japan)

^e JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRAP; MINORITY CARRIER INJECTION; RECOMBINATION CENTERS; SPACE SOLAR CELLS;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

PROTONS;

EID: 79956002762     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1491005     Document Type: Article

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