Thermionic and tunneling transport mechanisms in graphene field-effect transistors

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 7, 2008, Pages 1527-1533

  Ryzhii, Victor ^a,c   Ryzhii, Maxim ^a,c   Otsuji, Taiichi ^b,c  

^a UNIVERSITY OF AIZU   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACK GATES; DEVICE MODELS; GRAPHENE; HIGHLY CONDUCTING; NONLOCALITY; SPATIAL DISTRIBUTIONS; TOP GATES; TUNNELING CURRENTS; TUNNELING TRANSPORT MECHANISMS; VOLTAGE DEPENDENCES;

ANALYTIC EQUIPMENT; ATMOSPHERIC ELECTRICITY; DRAIN CURRENT; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; POISSON EQUATION; TRANSISTORS; TUNNELING (EXCAVATION);

FIELD EFFECT TRANSISTORS;

EID: 54249101730     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200724035     Document Type: Review

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