Device model for graphene bilayer field-effect transistor

Journal of Applied Physics

Volumn 105, Issue 10, 2009, Pages

  Ryzhii, V ^a,b   Ryzhii, M ^a,b   Satou, A ^a,b   Otsuji, T ^b,c   Kirova, N ^d  

^a UNIVERSITY OF AIZU   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d UNIVERSITÉ PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AC CURRENTS; AC SOURCES; BACK- AND TOP-GATE; BACK-GATE; BI-LAYER; DC CURRENT; DEVICE MODELS; ELECTRON TRANSPORT; FERMI ENERGY; FREQUENCY DEPENDENCE; GRAPHENE; HIGH FREQUENCY; NONMONOTONIC; SIGNAL FREQUENCIES; STRUCTURAL PARAMETER; THRESHOLD FREQUENCY; TOP-GATE;

ANALYTIC EQUIPMENT; ELECTRON ENERGY LOSS SPECTROSCOPY; FIELD EFFECT TRANSISTORS; MESFET DEVICES; MOSFET DEVICES; TRANSCONDUCTANCE;

ELECTRONS;

EID: 66549099871     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3131686     Document Type: Article

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