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Volumn 56, Issue 12, 2009, Pages 2935-2944

Ballistic transport in InP-based HEMTs

Author keywords

Ballistic transport; Effective gate length; Millimeter wave transistors; Monte Carlo methods; Pseudomorphic high electron mobility transistors (PHEMTs)

Indexed keywords

BALLISTIC TRANSISTORS; BALLISTIC TRANSPORTS; CELLULAR MONTE CARLO; DEVICE PERFORMANCE; DRAIN VOLTAGE; DRAIN-INDUCED BARRIER LOWERING; EFFECTIVE GATE LENGTH; FULL BAND; GATE LENGTH; GATE REGION; INGAAS/INALAS; OUTPUT CHARACTERISTICS; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; SCATTERING MECHANISMS; SCATTERING PROCESS;

EID: 79953646985     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2033167     Document Type: Article
Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.