Electronic properties of a biased graphene bilayer

Journal of Physics Condensed Matter

Volumn 22, Issue 17, 2010, Pages

  Castro, Eduardo V ^a,b   Novoselov, K S ^c   Morozov, S V ^c   Peres, N M R ^d   Lopes Dos Santos, J M B ^a   Nilsson, Johan ^e   Guinea, F ^b   Geim, A K ^c   Castro Neto, A H ^e  

^a UNIVERSITY OF PORTO   (Portugal)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

^d UNIVERSITY OF MINHO   (Portugal)

^e Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND MODEL; BI-LAYER; BI-LAYER DEVICES; CONTINUUM APPROXIMATION; ELECTRICAL NOISE; ELECTRON-HOLE ASYMMETRY; EXTERNAL ELECTRIC FIELD; HOPPING ENERGIES; IN-PLANE; NEAREST-NEIGHBOUR; ON-SITE ENERGY; PARALLEL PLATE CAPACITORS; SCREENING CORRECTIONS; TIGHT BINDING; TIGHT-BINDING APPROXIMATIONS;

BINDING ENERGY; ELECTRIC FIELDS; ELECTRIC PROPERTIES; GRAPHENE; GRAPHITE; SILICON CARBIDE;

ELECTRONIC PROPERTIES;

EID: 77950791946     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/22/17/175503     Document Type: Article

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