Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 4, 2008, Pages 1628-1631

  Kim, Raseong ^a   Neophytou, Neophytos ^a   Paul, Abhijeet ^a   Klimeck, Gerhard ^a   Lundstrom, Mark S ^a  

^a Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC TRANSISTORS; BALLISTIC TRANSPORTS; BAND STRUCTURE EFFECTS; C-V CHARACTERISTICS; DISTINCTIVE FEATURES; DRAIN BIAS; GATE BIASES; I-V AND C-V CHARACTERISTICS; LOW TEMPERATURES; METAL-OXIDE SEMICONDUCTORS; NANO-WIRE TRANSISTORS; ONE-DIMENSIONAL; ROOM TEMPERATURES; TIGHT-BINDING MODEL;

BALLISTICS; BAND STRUCTURE; DIELECTRIC DEVICES; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; EXPLOSIVES; FIELD EFFECT TRANSISTORS; INDIUM ARSENIDE; ION BEAMS; METALS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; TWO DIMENSIONAL;

TRANSISTORS;

EID: 49749092131     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2908442     Document Type: Article

References (15)

1. C. P. Auth and J. D. Plummer, IEEE Electron Device Lett. 18, 74 (1997).
2. N. Singh, Tech. Dig.-Int. Electron Devices Meet. 2006, 547.
3. K. H. Cho, Tech. Dig.-Int. Electron Devices Meet. 2006, 543.
4. S. Ju, Nat. Nanotechnol. 2, 378 (2007).
5. P. R. Nair and M. A. Alam, Appl. Phys. Lett. 88, 233120 (2006).
6. A. Rahman, J. Guo, S. Datta, and M. S. Lundstrom, IEEE Trans. Electron Devices 50, 1853 (2003).
7. G. Klimeck, F. Oyafuso, T. B. Boykin, R. C. Bowen, and P. Allmen, Comput. Model. Eng. Sci. 3, 601 (2002).
8. S. Tyagi, Tech. Dig.-Int. Electron Devices Meet. 2005, 245.
9. G. Liang, J. Xiang, N. Kharche, G. Klimeck, C. M. Lieber, and M. Lundstrom, Nano Lett. 7, 642 (2007).
10. M. Lundstrom and J. Guo, Nanoscale Transistors: Device Physics, Modeling and Simulation (Springer, New York, 2005).
11. S. O. Koswatta, S. Hasan, M. S. Lundstrom, M. P. Anantram, and D. E. Nikonov, IEEE Trans. Electron Devices 54, 2339 (2007).
12. J. P. Colinge, W. Xiong, C. R. Cleavetin, T. Schulz, K. Schrüfer, K. Matthews, and P. Patruno, IEEE Electron Device Lett. 27, 120 (2006).
13. R. Kim and M. S. Lundstrom, IEEE Trans. Nanotechnol. (to be published).
14. S. Ilani, L. A. K. Donev, M. Kindermann, and P. L. McEuen, Nat. Phys. 2, 687 (2006).
15. N. Neophytou, A. Paul, M. S. Lundstrom, and G. Klimeck, SISPAD, Vienna, Austria, 2007 (unpublished), pp. 217-220.