RF sputtering of epitaxial lead chalcogenide films in argon and krypton plasma

Semiconductor Science and Technology

Volumn 26, Issue 5, 2011, Pages

  Zimin, S P ^a   Amirov, I I ^b   Gorlachev, E S ^a,b  

^a YAROSLAVL STATE UNIVERSITY   (Russian Federation)

^b Institute of Physics and Technology   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON ION; AVERAGE ENERGY; BINARY COMPOUNDS; BINARY LEAD; ETCH RATES; HIGH-DENSITY; INDUCTIVELY-COUPLED; ION ENERGIES; KRYPTON PLASMA; LEAD CHALCOGENIDES; MONOCRYSTALLINE; PBTE; PHYSICAL PRINCIPLES; PLASMA DISCHARGE; RF-SPUTTERING; SI (1 1 1); SPUTTERING YIELDS;

ARGON; CHALCOGENIDES; ELECTRIC DISCHARGES; ELECTROMAGNETIC INDUCTION; EPITAXIAL GROWTH; IONS; KRYPTON; LEAD COMPOUNDS; MICROELECTRONICS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHASE CHANGE MEMORY; SEMICONDUCTOR MATERIALS;

EPITAXIAL FILMS;

EID: 79953243839     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/5/055018     Document Type: Article

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