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Volumn 22, Issue 8, 2007, Pages 929-932

Role of threading dislocations during treatment of PbTe films in argon plasma

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; EPITAXIAL GROWTH; FILM GROWTH; LEAD COMPOUNDS; MOLECULAR BEAM EPITAXY; SILICON WAFERS;

EID: 34547411378     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/8/018     Document Type: Article
Times cited : (14)

References (10)
  • 6
    • 0347979640 scopus 로고    scopus 로고
    • Lead chalcogenide infrared detectors grown on silicon substrates
    • Zogg H 2003 Lead chalcogenide infrared detectors grown on silicon substrates Lead Chalcogenides: Physics and Applications ed D Khokhlov (London: Taylor and Francis) p 587
    • (2003) Lead Chalcogenides: Physics and Applications , pp. 587
    • Zogg, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.