Micromasking effect and nanostructure self-formation on the surface of lead chalcogenide epitaxial films on Si substrates during argon plasma treatment

Journal of Physics D: Applied Physics

Volumn 42, Issue 16, 2009, Pages

  Zimin, S P ^a   Gorlachev, E S ^a,b   Amirov, I I ^b   Zogg, H ^c  

^a YAROSLAVL STATE UNIVERSITY   (Russian Federation)

^b Institute of Physics and Technology   (Russian Federation)

^c ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; AR PLASMA TREATMENT; ARGON PLASMA TREATMENT; ATOMIC FLUORINE; EFFECT OF DISLOCATIONS; LEAD CHALCOGENIDES; MICROMASKING; NANOSTRUCTURE FORMATION; NOVEL METHODS; PLASMA TREATMENT; REACTOR CHAMBER; SELF FORMATION; SI (1 1 1); SI SUBSTRATES; SURFACE MODIFICATION; THREADING DISLOCATION;

ARGON; EPITAXIAL GROWTH; FLUORINE; LEAD; LEAD COMPOUNDS; NANOSTRUCTURES; PLASMA APPLICATIONS; PLASMA DIAGNOSTICS; PLASMAS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS;

EPITAXIAL FILMS;

EID: 70249130904     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/16/165205     Document Type: Article

References (32)

1. Zogg H, Arnold M, Felder F, Rahim M, Ebneter C, Zasavitskiy I, Quack N, Blunier S and Dual J 2008 J. Electron. Mater. 37 1497
2. Singh A, Bhattacharya S, Thinaharan C, Aswal D K, Gupta S K, Yakhmi J V and Bhanumurthy K 2009 J. Phys. D: Appl. Phys. 42 015502
3. Boniche I, Morgan B C, Taylor P J, Meyer C D and Arnold D P 2008 J. Vac. Sci. Technol. A 26 739
4. Zogg H, Maissen C, Blunier S, Teodoropol S, Overney R M, Richmond T and Tomm J W 1993 Semicond. Sci. Technol. 8 S337
5. Wise F W 2000 Acc. Chem. Res. 33 773
6. Olkhovets A, Hsu R-C, Lipovskii A and Wise F W 1998 Phys. Rev. Lett. 81 3539
7. Grabecki G 2007 J. Appl. Phys. 101 081722
8. Bakueva L, Musikhin S, Hines M A, Chang T-W F, Tzolov M, Scholes G D and Sargent E H 2003 Appl. Phys. Lett. 82 2895
9. Alchalabi K, Zimin D, Kostorz G and Zogg H 2003 Phys. Rev. Lett. 90 026104
10. Springholz G, Holy V, Pincolits M and Bauer G 1998 Science 282 734
11. Schwarzl Th, Heiss W, Kocher-Oberlehner G and Springholz G 1999 Semicond. Sci. Technol. 14 L11
12. Zimin S P, Gorlachev E S, Amirov I I, Gerke M N, Zogg H and Zimin D S 2007 Semicond. Sci. Technol. 22 929
13. Zimin S P, Bogoyavlenskaya E A, Gorlachev E S, Naumov V V, Zimin D, Zogg H and Arnold M 2007 Semicond. Sci. Technol. 22 1317
14. Zimin S P, Gorlachev E S, Amirov I I and Gerke M N 2008 Russ. Microelectron. 37 175
15. Arnold M, Zimin D and Zogg H 2005 Appl. Phys. Lett. 87 141103
16. Kibalov D S, Orlov O M, Simakin S G and Smirnov V K 2004 Tech. Phys. Lett. 30 897
17. Oehrlein G S, Rembetski J F and Payne E H 1990 J. Vac. Sci. Technol. 8 1199
18. Craighead H G, Howard R E and Tennant D M 1980 Appl. Phys. Lett. 37 653
19. Zhao Q and Kohl P A 1998 J. Electrochem. Soc. 145 1257
20. She J C, Deng S Z, Xu N S, Yao R H and Chen J 2006 Appl. Phys. Lett. 88 013112
21. Dixit P and Miao J 2006 J. Electrochem. Soc. 153 G771
22. Steckl A J and Yih P H 1992 Appl. Phys. Lett. 60 1966
23. Fleischman A J, Zorman C A and Mehregany M 1998 J. Vac. Sci. Technol. B 16 536
24. Choi D Y, Lee J H, Kim D S and Jung S T 2004 J. Appl. Phys. 95 8400
25. Lee J-M, Chang K-M, Lee I-H and Park S-J 2000 J. Electrochem. Soc. 147 1859
26. Ramos R, Cunge G, Pelissier B and Joubert O 2007 Plasma Sources Sci. Technol. 16 711
27. Pelletier J, Arnal Y and Durandet A 1987 Europhys. Lett. 4 1049
28. Wang B and Zhang B 2007 Diamond Relat. Mater. 16 1982
29. Tsui B-Y, Yang T-J and Ku T-K 2001 Microelectron. Reliab. 41 1889
30. Lee H-N, Park J-C and Lee W-G 2002 Japan. J. Appl. Phys. 41 L412
31. Ostrikov K and Murphy A B 2007 J. Phys. D: Appl. Phys. 40 2223
32. Levchenko I and Ostrikov K 2007 J. Phys. D: Appl. Phys. 40 2308