Submicrometer- and nanometer-structure formation on the surface of epitaxial IV-VI semiconductor films by Ar-plasma treatment

Russian Microelectronics

Volumn 37, Issue 3, 2008, Pages 175-186

  Zimin, S P ^a   Gorlachev, E S ^a   Amirov, I I ^b   Gerke, M N ^c  

^a YAROSLAVL STATE UNIVERSITY   (Russian Federation)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^c VLADIMIR STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRONIC STRUCTURE; PARAMETER ESTIMATION; PLASMA THEORY; SPUTTERING;

EPITAXIAL SEMICONDUCTOR FILMS; FILM SURFACES; PLASMA TREATMENT; SPUTTERING PARAMETERS;

EPITAXIAL FILMS;

EID: 44349138157     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063739708030050     Document Type: Article

References (17)

1. Hung, S.C., Su, Y.K., Chang, S.J., Chen, S.C., Ji, L.W., Fang, T.H., Tu, L.W., and Chen, M., Self-formation of GaN Hollow Nanocolumns by Inductively Coupled Plasma Etching, Appl. Phys. A, 2005, vol. 80, pp. 1607-1610.
2. Milekhin, A.G., Meijers, R.J., Richter, T., Calarco, R., Montanari, S., Luth, H., Paez Sierra, B.A., and Zahn, D.R.T., Raman Scattering Study of GaN Nanostructures Obtained by Bottom-Up and Top-Down Approaches, J. Phys.: Condens. Matter, 2006, vol. 18, pp. 5825-5834.
3. Yoshida, H., Urushido, T., Miyake, H., and Hiramatsu, K., Formation of GaN Self-organized Nanotips by Reactive Ion Etching, Jpn. J. Appl. Phys., Part 1, 2001, vol. 40, no. 12A, pp. L1301-L1304.
4. Furst, J., Pascher, H., Schwarzl, T., Boberl, M., Springholz, G., Bauer, G., and Heiss, W., Continuous-Wave Emission from Midinfrared IV-VI Vertical-Cavity Surface-Emitting Lasers, Appl. Phys. Lett., 2004, vol. 84,no. 17, pp. 3268-3270.
5. Olkhovets, A., Hsu, R.-C., Lipovskii, A., and Wise, F.W., Size-Dependent Temperature Variation of the Energy Gap in Lead-Salt Quantum Dots, Phys. Rev. Lett., 1998, vol. 81, no. 16, pp. 3539-3542.
6. Wise, F.W., Lead Salt Quantum Dots: The Limit of Strong Quantum Confinement, Acc. Chem. Res., 2000, vol. 33, pp. 773-780.
7. Grabecki, G., Wrobel, J., Dietl, T., Janik, E., Aleszkiewicz, M., Papis, E., Kaminska, E., Piotrowska, A., Springholz, G., and Bauer, G., PbTe-A New Medium for Quantum Ballistic Devices, Physica E, 2006, vol. 34, pp. 560-563.
8. 2 Plasma Etching of IV-VI Semiconductor Nanostructures, Semicond. Sci. Technol., 1999, vol. 14, no. 2, pp. 11-14.
9. Zimin, S.P., Gorlachev, E.S., Amirov, I.I., Gerke, M.N., Zogg, H., and Zimin, D., Role of Threading Dislocations during Treatment of PbTe Films in Argon Plasma, Semicond. Sci. Technol., 2007, vol. 22, no. 8, pp. 929-932.
10. 2/Si(111), Semicond. Sci. Technol., 2007, vol. 22, no. 12, pp. 1317-1322.
11. Alchalabi, K., Zimin, D., Kostorz, G., and Zogg, H., Self-assembled Semiconductor Quantum Dots with Nearly Uniform Sizes, Phys. Rev. Lett., 2003, vol. 90, no. 2, p. 026104-1-4.
12. Amirov, I.I., Berdnikov, A.E., and Izyumov, M.O., Etching of Resists in a Reactor with an RF Inductive Plasma Source, Mikroelektronika, 1998, vol. 27, no. 1, pp. 22-27 [Russ. Microelectron. (Engl. Transl.), vol. 27, no. 1, pp. 17-21].
13. Orlikovskii, A.A., Plasma Processes in Micro-and Nanoelectronics. Part 2: New-Generation Plasmochemical Reactors in Microelectronics, Mikroelektronika, 1999, vol. 28, no. 6, pp. 415-426 [Russ. Microelectron. (Engl. Transl.), vol. 28, no. 6, pp. 355-364].
14. Cardinaud, C., Peignon, M.-C., and Tessier, P.-Y., Plasma Etching: Principles, Mechanisms, Application to Micro-and Nano-technologies, Appl. Surf. Sci., 2000, vol. 164, pp. 72-83.
15. Zogg, H., Maissen, C., Blunier, S., Teodoropol, S., Overney, R.M., Richmond T., and Tomm, J.W., Thermal-Mismatch Strain Relaxation Mechanisms in Heteroepitaxial Lead Chalcogenide Layers on Si Substrates, Semicond. Sci. Technol., 1993, vol. 8, pp. S337-S341.
16. Lieberman, M.A., Spherical Shell Model of an Asymmetric RF Discharge, J. Appl. Phys., 1989, vol. 65, no. 11, pp. 4186-4191.
17. Amirov, I.I., Reactive Ion Etching of Silicon or Silicon Oxide in Multicomponent Plasmas, in Issledovanie tekhnologicheskikh protsessov i priborov mikroelektroniki (Studies on Microelectronic Device and Process Technologies), Moscow: Nauka, 1997, pp. 19-36.