-
4
-
-
16644387384
-
-
S. Krishna, A. D. Stiff-Roberts, J. D. Phillips, et al., IEEE LEOS Newsl. 16 (1), 19 (2002).
-
(2002)
IEEE LEOS Newsl.
, vol.16
, Issue.1
, pp. 19
-
-
Krishna, S.1
Stiff-Roberts, A.D.2
Phillips, J.D.3
-
7
-
-
0142163987
-
-
U.S. Patent No. 4128467 (1978)
-
K. Fisher and N. Rappenau, U.S. Patent No. 4128467 (1978).
-
-
-
Fisher, K.1
Rappenau, N.2
-
8
-
-
0142194813
-
-
U.S. Patent No. 4301591 (1981)
-
R. B. Withers, U.S. Patent No. 4301591 (1981).
-
-
-
Withers, R.B.1
-
13
-
-
0142225944
-
-
U.S. Patent No. 4411732 (1983)
-
J. T. M. Wotherspoon, U.S. Patent No. 4411732 (1983).
-
-
-
Wotherspoon, J.T.M.1
-
14
-
-
0142257024
-
-
U.S. Patent No. 4521798 (1985)
-
I. M. Baker, U.S. Patent No. 4521798 (1985).
-
-
-
Baker, I.M.1
-
15
-
-
0023420125
-
-
M. V. Blackman, D. E. Charlton, M. D. Jenner, et al., Electron. Lett. 23, 978 (1987).
-
(1987)
Electron. Lett.
, vol.23
, pp. 978
-
-
Blackman, M.V.1
Charlton, D.E.2
Jenner, M.D.3
-
19
-
-
0142225942
-
-
K. D. Mynbaev, N. L. Bazhenov, V. A. Smirnov, and V. I. Ivanov-Omskiǐ, Pis'ma Zh. Tekh. Fiz. 28 (22), 64 (2002) [Tech. Phys. Lett. 28, 955 (2002)].
-
(2002)
Pis'ma Zh. Tekh. Fiz.
, vol.28
, Issue.22
, pp. 64
-
-
Mynbaev, K.D.1
Bazhenov, N.L.2
Smirnov, V.A.3
Ivanov-Omskiǐ, V.I.4
-
20
-
-
0036862740
-
-
K. D. Mynbaev, N. L. Bazhenov, V. A. Smirnov, and V. I. Ivanov-Omskiǐ, Pis'ma Zh. Tekh. Fiz. 28 (22), 64 (2002) [Tech. Phys. Lett. 28, 955 (2002)].
-
(2002)
Tech. Phys. Lett.
, vol.28
, pp. 955
-
-
-
21
-
-
0027664422
-
-
E. Belas, P. Hoshl, R. Grill, et al., Semicond. Sci. Technol. 8, 1695 (1993).
-
(1993)
Semicond. Sci. Technol.
, vol.8
, pp. 1695
-
-
Belas, E.1
Hoshl, P.2
Grill, R.3
-
22
-
-
0033703232
-
-
R. Haakenaasen, T. Colin, H. Steen, and L. Trosdahl-Iversen, J. Electron. Mater. 29, 849 (2000).
-
(2000)
J. Electron. Mater.
, vol.29
, pp. 849
-
-
Haakenaasen, R.1
Colin, T.2
Steen, H.3
Trosdahl-Iversen, L.4
-
23
-
-
0036137214
-
-
R. Haakenaasen, T. Moen, T. Colin, et al., J. Appl. Phys. 91, 427 (2002).
-
(2002)
J. Appl. Phys.
, vol.91
, pp. 427
-
-
Haakenaasen, R.1
Moen, T.2
Colin, T.3
-
24
-
-
0032674156
-
-
I. I. Izhnin, A. I. Izhnin, K. R. Kurbanov, and B. B. Prytuljak, Proc. SPIE 3725, 291 (1999).
-
(1999)
Proc. SPIE
, vol.3725
, pp. 291
-
-
Izhnin, I.I.1
Izhnin, A.I.2
Kurbanov, K.R.3
Prytuljak, B.B.4
-
26
-
-
0012089420
-
-
V. I. Ivanov-Omskiǐ, K. E. Mironov, and K. D. Mynbaev, Fiz. Tekh. Poluprovodn. (Leningrad) 24, 2222 (1990) [Sov. Phys. Semicond. 24, 1379 (1990)].
-
(1990)
Fiz. Tekh. Poluprovodn. (Leningrad)
, vol.24
, pp. 2222
-
-
Ivanov-Omskiǐ, V.I.1
Mironov, K.E.2
Mynbaev, K.D.3
-
27
-
-
0004543733
-
-
V. I. Ivanov-Omskiǐ, K. E. Mironov, and K. D. Mynbaev, Fiz. Tekh. Poluprovodn. (Leningrad) 24, 2222 (1990) [Sov. Phys. Semicond. 24, 1379 (1990)].
-
(1990)
Sov. Phys. Semicond.
, vol.24
, pp. 1379
-
-
-
28
-
-
0030194174
-
-
E. Belas, J. Franc, A. Toth, et al., Semicond. Sci. Technol. 11, 1116 (1996).
-
(1996)
Semicond. Sci. Technol.
, vol.11
, pp. 1116
-
-
Belas, E.1
Franc, J.2
Toth, A.3
-
29
-
-
0142194811
-
-
Kiev
-
V. V. Bogoboyashchiǐ, A. P. Vlasov, S. A. Dvoretskiǐ, et al., in Abstracts of 2nd Russian-Ukrainian Seminar on Nanophysics and Nanoelectronics (Kiev, 2000), p. 63.
-
(2000)
Abstracts of 2nd Russian-Ukrainian Seminar on Nanophysics and Nanoelectronics
, pp. 63
-
-
Bogoboyashchiǐ, V.V.1
Vlasov, A.P.2
Dvoretskiǐ, S.A.3
-
30
-
-
0142225939
-
-
A. V. Dvurechenskiǐ, V. G. Remesnik, I. A. Ryazantsev, and N. Kh. Talipov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 27, 168 (1993) [Semiconductors 27, 90 (1993)].
-
(1993)
Fiz. Tekh. Poluprovodn. (St. Petersburg)
, vol.27
, pp. 168
-
-
Dvurechenskiǐ, A.V.1
Remesnik, V.G.2
Ryazantsev, I.A.3
Talipov, N.Kh.4
-
31
-
-
0142194810
-
-
A. V. Dvurechenskiǐ, V. G. Remesnik, I. A. Ryazantsev, and N. Kh. Talipov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 27, 168 (1993) [Semiconductors 27, 90 (1993)].
-
(1993)
Semiconductors
, vol.27
, pp. 90
-
-
-
32
-
-
0031162473
-
-
J. F. Siliquini, J. M. Dell, C. A. Musca, and L. Faraone, Appl. Phys. Lett. 70, 3443 (1997).
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 3443
-
-
Siliquini, J.F.1
Dell, J.M.2
Musca, C.A.3
Faraone, L.4
-
33
-
-
0032635471
-
-
V. G. Savitsky, L. G. Mansurov, I. M. Fodchuk, et al., Proc. SPIE 3725, 299 (1999).
-
(1999)
Proc. SPIE
, vol.3725
, pp. 299
-
-
Savitsky, V.G.1
Mansurov, L.G.2
Fodchuk, I.M.3
-
34
-
-
0000527759
-
-
J. F. Siliquini, J. M. Dell, C. A. Musca, et al., J. Cryst. Growth 184/185, 1219 (1998).
-
(1998)
J. Cryst. Growth
, vol.184-185
, pp. 1219
-
-
Siliquini, J.F.1
Dell, J.M.2
Musca, C.A.3
-
35
-
-
0033717955
-
-
M. H. Rais, C. A. Musca, J. Antoszewski, et al., J. Cryst. Growth 214/215, 1106 (2000).
-
(2000)
J. Cryst. Growth
, vol.214-215
, pp. 1106
-
-
Rais, M.H.1
Musca, C.A.2
Antoszewski, J.3
-
36
-
-
0010755765
-
-
J. M. Dell, C. A. Musca, L. Faraone, et al., Microelectron. J. 31, 545 (2000).
-
(2000)
Microelectron. J.
, vol.31
, pp. 545
-
-
Dell, J.M.1
Musca, C.A.2
Faraone, L.3
-
37
-
-
0043022400
-
-
P. Brogowski, J. Rutkowski, J. Piotrowski, and H. Mucha, Electron Technol. 24 (3/4), 93 (1991).
-
(1991)
Electron Technol.
, vol.24
, Issue.3-4
, pp. 93
-
-
Brogowski, P.1
Rutkowski, J.2
Piotrowski, J.3
Mucha, H.4
-
38
-
-
0142163984
-
-
É. Belas, J. Franc, R. Grill, et al., Neorg. Mater. 32, 949 (1996).
-
(1996)
Neorg. Mater.
, vol.32
, pp. 949
-
-
Belas, É.1
Franc, J.2
Grill, R.3
-
39
-
-
0033702183
-
-
J. Antoszewski, C. A. Musca, J. M. Dell, and L. Faraone, J. Electron. Mater. 29, 837 (2000).
-
(2000)
J. Electron. Mater.
, vol.29
, pp. 837
-
-
Antoszewski, J.1
Musca, C.A.2
Dell, J.M.3
Faraone, L.4
-
40
-
-
0036637772
-
-
T. Nguen, J. Antoszewski, C. A. Musca, et al., J. Electron. Mater. 31, 652 (2002).
-
(2002)
J. Electron. Mater.
, vol.31
, pp. 652
-
-
Nguen, T.1
Antoszewski, J.2
Musca, C.A.3
-
41
-
-
0000998980
-
-
E. P. G. Smith, J. F. Siliquini, C. A. Musca, et al., J. Appl. Phys. 83, 5555 (1998).
-
(1998)
J. Appl. Phys.
, vol.83
, pp. 5555
-
-
Smith, E.P.G.1
Siliquini, J.F.2
Musca, C.A.3
-
42
-
-
0142163983
-
-
V. V. Bogoboyashchiǐ, A. P. Vlasov, and I. I. Izhnin, Izv. Vyssh. Uchebn. Zaved. Fiz. 44 (1), 50 (2001).
-
(2001)
Izv. Vyssh. Uchebn. Zaved. Fiz.
, vol.44
, Issue.1
, pp. 50
-
-
Bogoboyashchiǐ, V.V.1
Vlasov, A.P.2
Izhnin, I.I.3
-
43
-
-
0035994387
-
-
N. N. Berchenko, V. V. Bogoboyashchiy, I. I. Izhnin, and A. P. Vlasov, Phys. Status Solidi B 229, 279 (2002).
-
(2002)
Phys. Status Solidi B
, vol.229
, pp. 279
-
-
Berchenko, N.N.1
Bogoboyashchiy, V.V.2
Izhnin, I.I.3
Vlasov, A.P.4
-
44
-
-
0036396023
-
-
N. N. Berchenko, V. V. Bogoboyashchiy, I. I. Izhnin, et al., Surf. Coat. Technol. 158-159, 732 (2002).
-
(2002)
Surf. Coat. Technol.
, vol.158-159
, pp. 732
-
-
Berchenko, N.N.1
Bogoboyashchiy, V.V.2
Izhnin, I.I.3
-
45
-
-
57649108767
-
-
I. I. Izhnin, A. I. Izhnin, K. R. Kurbanov, and B. B. Prytuljak, Proc. SPIE 3182, 383 (1997).
-
(1997)
Proc. SPIE
, vol.3182
, pp. 383
-
-
Izhnin, I.I.1
Izhnin, A.I.2
Kurbanov, K.R.3
Prytuljak, B.B.4
-
46
-
-
0028760784
-
-
E. Belas, P. Hoschl, R. Grill, et al., J. Cryst. Growth 138, 940 (1994).
-
(1994)
J. Cryst. Growth
, vol.138
, pp. 940
-
-
Belas, E.1
Hoschl, P.2
Grill, R.3
-
47
-
-
0030562213
-
-
E. Belas, R. Grill, J. Franc, et al., J. Cryst. Growth 159, 1117 (1996).
-
(1996)
J. Cryst. Growth
, vol.159
, pp. 1117
-
-
Belas, E.1
Grill, R.2
Franc, J.3
-
48
-
-
0035309522
-
-
E. Belas, R. Grill, J. Franc, et al., J. Cryst. Growth 224, 52 (2001).
-
(2001)
J. Cryst. Growth
, vol.224
, pp. 52
-
-
Belas, E.1
Grill, R.2
Franc, J.3
-
49
-
-
0036638602
-
-
E. Belas, R. Grill, J. Franc, et al., J. Electron. Mater. 31, 738 (2002).
-
(2002)
J. Electron. Mater.
, vol.31
, pp. 738
-
-
Belas, E.1
Grill, R.2
Franc, J.3
-
50
-
-
0035359788
-
-
J. White, R. Pal, J. M. Dell, et al., J. Electron. Mater. 30, 762 (2001).
-
(2001)
J. Electron. Mater.
, vol.30
, pp. 762
-
-
White, J.1
Pal, R.2
Dell, J.M.3
-
52
-
-
84955013157
-
-
H. F. Schaake, J. H. Tregilgas, J. D. Beck, et al., J. Vac. Sci. Technol. A 3, 143 (1985).
-
(1985)
J. Vac. Sci. Technol. A
, vol.3
, pp. 143
-
-
Schaake, H.F.1
Tregilgas, J.H.2
Beck, J.D.3
-
54
-
-
0041617248
-
-
V. V. Bogoboyashchiǐ, A. I. Elizarov, V. I. Ivanov-Omskiǐ, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 19, 819 (1985) [Sov. Phys. Semicond. 19, 505 (1985)].
-
(1985)
Fiz. Tekh. Poluprovodn. (Leningrad)
, vol.19
, pp. 819
-
-
Bogoboyashchiǐ, V.V.1
Elizarov, A.I.2
Ivanov-Omskiǐ, V.I.3
-
55
-
-
0343295760
-
-
V. V. Bogoboyashchiǐ, A. I. Elizarov, V. I. Ivanov-Omskiǐ, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 19, 819 (1985) [Sov. Phys. Semicond. 19, 505 (1985)].
-
(1985)
Sov. Phys. Semicond.
, vol.19
, pp. 505
-
-
-
58
-
-
0028760844
-
-
M. P. Hastings, C. D. Maxey, B. E. Matthews, et al., J. Cryst. Growth 138, 917 (1994).
-
(1994)
J. Cryst. Growth
, vol.138
, pp. 917
-
-
Hastings, M.P.1
Maxey, C.D.2
Matthews, B.E.3
-
59
-
-
0036637884
-
-
R. Haakenaasen, H. Steen, T. Lorentzen, et al., J. Electron. Mater. 31, 710 (2002).
-
(2002)
J. Electron. Mater.
, vol.31
, pp. 710
-
-
Haakenaasen, R.1
Steen, H.2
Lorentzen, T.3
-
60
-
-
0142163981
-
-
Zakopane
-
N. N. Berchenko, V. V. Bogoboyashchiy, I. I. Izhnin, et al., in Abstracts of International Conference on Solid State Crystals (Zakopane, 2002), p. 197.
-
(2002)
Abstracts of International Conference on Solid State Crystals
, pp. 197
-
-
Berchenko, N.N.1
Bogoboyashchiy, V.V.2
Izhnin, I.I.3
-
61
-
-
0030129652
-
-
I. M. Baker, M. P. Hastings, L. G. Hipwood, et al., III-Vs Rev. 9 (2), 50 (1996).
-
(1996)
III-Vs Rev.
, vol.9
, Issue.2
, pp. 50
-
-
Baker, I.M.1
Hastings, M.P.2
Hipwood, L.G.3
-
62
-
-
84955018580
-
-
C. T. Elliott, N. T. Gordon, R. S. Hall, and G. Crimes, J. Vac. Sci. Technol. A 8, 1251 (1990).
-
(1990)
J. Vac. Sci. Technol. A
, vol.8
, pp. 1251
-
-
Elliott, C.T.1
Gordon, N.T.2
Hall, R.S.3
Crimes, G.4
-
63
-
-
0347617224
-
-
N. L. Bazhenov, S. I. Gasanov, V. I. Ivanov-Omskiǐ, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 25, 2196 (1991) [Sov. Phys. Semicond. 25, 1323 (1991)].
-
(1991)
Fiz. Tekh. Poluprovodn. (Leningrad)
, vol.25
, pp. 2196
-
-
Bazhenov, N.L.1
Gasanov, S.I.2
Ivanov-Omskiǐ, V.I.3
-
64
-
-
0041984430
-
-
N. L. Bazhenov, S. I. Gasanov, V. I. Ivanov-Omskiǐ, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 25, 2196 (1991) [Sov. Phys. Semicond. 25, 1323 (1991)].
-
(1991)
Sov. Phys. Semicond.
, vol.25
, pp. 1323
-
-
-
65
-
-
0023165704
-
-
R. E. DeWames, G. M. Williams, J. G. Pasko, and A. H. B. Vandervyck, J. Cryst. Growth 86, 849 (1988).
-
(1988)
J. Cryst. Growth
, vol.86
, pp. 849
-
-
Dewames, R.E.1
Williams, G.M.2
Pasko, J.G.3
Vandervyck, A.H.B.4
-
66
-
-
0004005306
-
-
Wiley, New York; Mir, Moscow
-
S. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981; Mir, Moscow, 1984).
-
(1981)
Physics of Semiconductor Devices, 2nd Ed.
-
-
Sze, S.1
-
67
-
-
68749106238
-
-
R. E. DeWames, J. G. Pasko, E. S. Yao, et al., J. Vac. Sci. Technol. A 6, 2655 (1988).
-
(1988)
J. Vac. Sci. Technol. A
, vol.6
, pp. 2655
-
-
Dewames, R.E.1
Pasko, J.G.2
Yao, E.S.3
-
69
-
-
0033716457
-
-
J. M. Dell, J. Antoszewski, M. H. Rais, et al., J. Electron. Mater. 29, 841 (2000).
-
(2000)
J. Electron. Mater.
, vol.29
, pp. 841
-
-
Dell, J.M.1
Antoszewski, J.2
Rais, M.H.3
-
70
-
-
0036638201
-
-
J. K. White, J. Antoszewski, R. Pal, et al., J. Electron. Mater. 31, 743 (2002).
-
(2002)
J. Electron. Mater.
, vol.31
, pp. 743
-
-
White, J.K.1
Antoszewski, J.2
Pal, R.3
-
71
-
-
0000268878
-
-
C. Musca, J. Antoszewski, J. Dell, et al., J. Electron. Mater. 27, 740 (1998).
-
(1998)
J. Electron. Mater.
, vol.27
, pp. 740
-
-
Musca, C.1
Antoszewski, J.2
Dell, J.3
-
72
-
-
0032179026
-
-
J. Piotrowski, Z. Nowak, J. Antoszewski, et al., Semicond. Sci. Technol. 13, 1209 (1998).
-
(1998)
Semicond. Sci. Technol.
, vol.13
, pp. 1209
-
-
Piotrowski, J.1
Nowak, Z.2
Antoszewski, J.3
-
73
-
-
0142225470
-
-
E. P. G. Smith, K. J. Winchester, C. A. Musca, et al., Semicond. Sci. Technol. 16, 444 (2001).
-
(2001)
Semicond. Sci. Technol.
, vol.16
, pp. 444
-
-
Smith, E.P.G.1
Winchester, K.J.2
Musca, C.A.3
|