Spectroscopic and electrical properties of atomic layer deposition Al 2O2 gate dielectric on surface pretreated Si substrate

Journal of Applied Physics

Volumn 99, Issue 7, 2006, Pages

  Xu, Min ^a   Xu, Cong Hui ^a   Ding, Shi Jin ^a   Lu, Hong Liang ^a   Zhang, David Wei ^a   Wang, Li Kang ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; HIGH RESOLUTION ELECTRON MICROSCOPY; LEAKAGE CURRENTS; SILICON; SPECTROSCOPIC ANALYSIS; SUBSTRATES; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); ELECTRICAL PROPERTIES; GATE BIAS; INTERFACIAL LAYER (IL) SUPPRESSION; NITRIDATION;

ALUMINA;

EID: 33645992130     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2187409     Document Type: Article

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