High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Yu, Hyun Yong ^a   Kobayashi, Masaharu ^a   Jung, Woo Shik ^a   Okyay, Ali K ^b   Nishi, Yoshio ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b BILKENT UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROEPITAXY; HIGH QUALITY SINGLE CRYSTALS; IN-SITU DOPING; MONOLITHIC INTEGRATION; MOSFETS; NMOSFETS; RAISED SOURCE/DRAIN; SERIES RESISTANCES; SI CMOS; SOURCE AND DRAINS; SOURCE/DRAIN SERIES RESISTANCES;

ELECTRIC RESISTANCE; ELECTRON DEVICES; ELECTRON MOBILITY; EPITAXIAL GROWTH; GERMANIUM; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SINGLE CRYSTALS;

MOSFET DEVICES;

EID: 77952366681     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424245     Document Type: Conference Paper

References (8)

1. F. A. Trumbore, Bell Syst. Tech. J. 39, 205 (1960)
2. B. L. Sharma, Defect Diffus. Forum 70-71, 1 (1990)
3. W. C. Dunlap, Phys. Rev. 94, 1531 (1954)
4. Nayfeh et al, Appl. Phys. Lett. 85, 2815.
5. Masaharu et al., VLSI 2009, p.76.
6. Kuzum et al., IEDM 2007, p.723.
7. Park et al., IEDM 2008, p.389.
8. Takahashi et al., IEDM 2007, p.697.