Experimental demonstration of high mobility Ge NMOS

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Kuzum, Duygu ^a   Krishnamohan, Tejas ^a,b   Nainani, Aneesh ^a   Sun, Yun ^a   Pianetta, Piero A ^a   Wong, H S P ^a   Saraswat, Krishna C ^a  

^a STANFORD UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRIC STACKS; GATE STACKS; HIGH MOBILITY; INTERFACE TRAP DENSITY; INVERSION CHARGE; LOW TEMPERATURES; PARASITIC RESISTANCES; PERFORMANCE DEGRADATION;

ELECTRON DEVICES; ELECTRON MOBILITY; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HALL MOBILITY; OZONE;

GALVANOMAGNETIC EFFECTS;

EID: 77952387234     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424322     Document Type: Conference Paper

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